High-Voltage GreenMOS Series
| Series | Specifications | Applications |
|---|
| Generic | 5A-80A, 500V-900V | All applications |
| E-Series | 5A-20A, 650V | TV/Monitor PSU, EMI balanced |
| S-Series | 8A-80A, 650V | Chargers/adapters, EMI optimized |
| Z-Series | 11A-80A, 650V | Half/full-bridge motor driver, FRD integrated |
| OSS-Series | 11A-38A, 650V | Super-fast switching, GaN replacement |
Mid/Low-Voltage SGTMOS / SFGMOS
SFGMOS MOSFETs use a semi-floating gate structure, combining the advantages of planar and SGT power MOSFETs with higher process stability and reliability, faster switching, lower gate charge, and higher efficiency. Covers 20V-200V for motor drives, synchronous rectification, etc.
| Series | Voltage Range | Type |
|---|
| SGT-I | 30-250V | N-Channel SGT MOSFET |
| SGT-II | 30-120V | N-Channel SGT MOSFET |
| SJ-III | 500-800V | N-Channel Super Junction |
| SJ-IV | 500-1050V | N-Channel Super Junction |
Auto MOSFET (Automotive Grade)
| Type | Voltage Range |
|---|
| N-Channel Automotive MOSFET | 12-300V |
| P-Channel Automotive MOSFET | 12-150V |
| Complementary MOSFET (N+P) | 12-300V |
| Half-Bridge N-Channel MOSFET | 12-300V |
IGBT
IGBT chips feature TGBT (Trident-Gate Bipolar Transistor) structure for lower VCE(sat) and reduced switching losses.
| Voltage | Key Features |
|---|
| 600-650V | Excellent conduction, minimal tail current, superior short-circuit ruggedness |
| 1200-1350V | Excellent conduction, minimal tail current, superior short-circuit ruggedness |
