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SiC (Silicon Carbide)

SiC Power Devices & Driver Solutions for New Energy & Automotive Electronics

SiC (Silicon Carbide)

Overview

Silicon Carbide (SiC), as a third-generation wide-bandgap semiconductor material, features high breakdown voltage, low on-resistance, and high-frequency/high-temperature operation capability — making it ideal for EV, PV energy storage, and charging pile applications. FASTSPEEDS&T distributes InventChip, ZienerTech and other SiC brands.

InventChip

InventChip provides power conversion solutions centered on SiC power devices, SiC gate drivers, and SiC modules:

  • SiC SBD: 650V-1200V Schottky barrier diodes, multiple current ratings
  • SiC MOSFET: 650V-1200V, TO-247/TO-220 and other packages
  • SiC Modules: Integrated solutions for higher power density
  • Gate Drivers: Isolated drivers optimized for SiC
  • Controllers: PWM controllers for SiC applications

ZienerTech

ZienerTech focuses on high-performance SiC MOSFET from 650V to 1200V, with RDS(on) ranging from 35mΩ to 1000mΩ. Available in DFN8×8, TO-252, TO-220F, TO-220, TO-247, TOLL and other packages to meet diverse power density and thermal requirements.

Typical Applications

EV OBC/DC-DC, charging pile modules, PV inverters, energy storage systems, industrial power supplies, motor drives, etc.

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