01 / 产品信息
产品概述
Wayon（维安） WMK161N15T2（MOSFET(SGT N沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMK161N15T2
- 品类
- MOSFET(SGT N沟道)
- 封装
- TO-220
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- Single Pulse Avalanche Energy3
- 720 mJ
- Total Power Dissipation4 TC=25℃
- 365 W
- Forward Transconductance2 gfs VDS=5V, ID=2
- 0A -80-S
- VGS =0V
- =0V
- RG = 10Ω
- = 20A
- VR = 75V,IF
- = 20A
- Forward Transconductance2 gfs VDS=5V, ID=20A
- 80 S
- Input Capacitance Ciss
- 6220
- Output Capacitance Coss
- 480 pF
- Reverse Transfer Capacitance Crss
- 11
- Total Gate Charge Qg
- 78
- Gate-Source Charge Qgs
- 29 nC
- Gate-Drain Charge Qgd
- 11
- Turn-on Delay Time td(on)
- 26
- Rise Time tr VGS =10V, VDD =75V
- 19
- Turn-off Delay Time td(off)
- 39
- Fall Time tf
- 15
- Body Diode Reverse Recovery Time trr
- 79 nS
- Body Diode Reverse Recovery Charge
- 158 nC
性能与环境
- Drain-Source voltage
- 150 V
- Gate-Source voltage
- ±20 V
- Avalanche Current
- 60 A
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 175 °C
- Thermal Resistance from Junction-to-Ambient1 RθJA
- 61 °C/W
- Thermal Resistance from Junction-to-Case1 RθJC
- 0.41 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V
- = 250µA 150--V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 150 V
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 3 V
- Drain-Source on-Resistance2 RDS(on) VGS = 10V, ID = 20A
- 5.4 mΩ
- Gate Resistance Rg
- 1.2 Ω
- Diode Forward Voltage2 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current1,5 IS VG=VD=0V , Force Current
- 161 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。