WMK161N15T2
Wayon WMK161N15T2 (MOSFET (SGT N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220
Product overview
Wayon WMK161N15T2 (MOSFET (SGT N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WMK161N15T2
- Category
- SGT MOSFETs
- Package
- TO-220
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
33 parametersConstruction
- Single Pulse Avalanche Energy3
- 720 mJ
- Total Power Dissipation4 TC=25℃
- 365 W
- Forward Transconductance2 gfs VDS=5V, ID=2
- 0A -80-S
- VGS =0V
- =0V
- RG = 10Ω
- = 20A
- VR = 75V,IF
- = 20A
- Forward Transconductance2 gfs VDS=5V, ID=20A
- 80 S
- Input Capacitance Ciss
- 6220
- Output Capacitance Coss
- 480 pF
- Reverse Transfer Capacitance Crss
- 11
- Total Gate Charge Qg
- 78
- Gate-Source Charge Qgs
- 29 nC
- Gate-Drain Charge Qgd
- 11
- Turn-on Delay Time td(on)
- 26
- Rise Time tr VGS =10V, VDD =75V
- 19
- Turn-off Delay Time td(off)
- 39
- Fall Time tf
- 15
- Body Diode Reverse Recovery Time trr
- 79 nS
- Body Diode Reverse Recovery Charge
- 158 nC
Performance
- Drain-Source voltage
- 150 V
- Gate-Source voltage
- ±20 V
- Avalanche Current
- 60 A
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 175 °C
- Thermal Resistance from Junction-to-Ambient1 RθJA
- 61 °C/W
- Thermal Resistance from Junction-to-Case1 RθJC
- 0.41 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V
- = 250µA 150--V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 150 V
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 3 V
- Drain-Source on-Resistance2 RDS(on) VGS = 10V, ID = 20A
- 5.4 mΩ
- Gate Resistance Rg
- 1.2 Ω
- Diode Forward Voltage2 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current1,5 IS VG=VD=0V , Force Current
- 161 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.