01 / 产品信息
产品概述
Wayon（维安） WMB072N12HG2（MOSFET(SGT N沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMB072N12HG2
- 品类
- MOSFET(SGT N沟道)
- 封装
- PDFN5x6-8L
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
29 项结构与连接
- Single Pulse Avalanche Energy3
- 168.2 mJ
- Total Power Dissipation4 TC=25°C
- 104 W
- Forward Transconductance2 gfs VDS = 5V
- = 20A 87-S
- VR =60V, IF=
- 20A
- Forward Transconductance2 gfs VDS = 5V, ID = 20A
- 87 S
- Input Capacitance Ciss
- 3750
- Output Capacitance Coss VDS = 50V, VGS =0V, f =1MHz
- 471 pF
- Reverse Transfer Capacitance Crss
- 12
- Total Gate Charge Qg
- 43
- Gate-Source Charge Qgs VGS = 10V, VDD = 60V, ID= 20A
- 7.7 nC
- Gate-Drain Charge Qgd
- 6.7
- Turn-on Delay Time td(on)
- 14.3
- Rise Time tr VGS =10V, VDD = 60V,RG = 10Ω
- 7.8
- Turn-off Delay Time td(off)
- 29
- Fall Time tf
- 8.6
- Reverse Recovery Time trr
- 46 ns
- Reverse Recovery Charge Qrr
- 278 nC
性能与环境
- Drain-Source Voltage
- 120 V
- Gate-Source Voltage
- ±20 V
- Thermal Resistance from Junction-to-Ambient1 RθJA
- 56 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 1.2 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V
- = 250µA --V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 120 V
- Gate-body Leakage Current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 3 V
- Drain-Source On-Resistance2 RDS(on) VGS = 10V, ID = 20A
- 6 mΩ
- Gate Resistance Rg VDS = 0V, VGS =0V, f =1MHz
- 2.2 Ω
- Diode Forward Voltage2 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current1,5 IS VG=VD=0V , Force Current
- 90 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。