WMB072N12HG2
Wayon WMB072N12HG2 (MOSFET (SGT N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- PDFN5x6-8L
Product overview
Wayon WMB072N12HG2 (MOSFET (SGT N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WMB072N12HG2
- Category
- SGT MOSFETs
- Package
- PDFN5x6-8L
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
29 parametersConstruction
- Single Pulse Avalanche Energy3
- 168.2 mJ
- Total Power Dissipation4 TC=25°C
- 104 W
- Forward Transconductance2 gfs VDS = 5V
- = 20A 87-S
- VR =60V, IF=
- 20A
- Forward Transconductance2 gfs VDS = 5V, ID = 20A
- 87 S
- Input Capacitance Ciss
- 3750
- Output Capacitance Coss VDS = 50V, VGS =0V, f =1MHz
- 471 pF
- Reverse Transfer Capacitance Crss
- 12
- Total Gate Charge Qg
- 43
- Gate-Source Charge Qgs VGS = 10V, VDD = 60V, ID= 20A
- 7.7 nC
- Gate-Drain Charge Qgd
- 6.7
- Turn-on Delay Time td(on)
- 14.3
- Rise Time tr VGS =10V, VDD = 60V,RG = 10Ω
- 7.8
- Turn-off Delay Time td(off)
- 29
- Fall Time tf
- 8.6
- Reverse Recovery Time trr
- 46 ns
- Reverse Recovery Charge Qrr
- 278 nC
Performance
- Drain-Source Voltage
- 120 V
- Gate-Source Voltage
- ±20 V
- Thermal Resistance from Junction-to-Ambient1 RθJA
- 56 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 1.2 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V
- = 250µA --V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 120 V
- Gate-body Leakage Current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 3 V
- Drain-Source On-Resistance2 RDS(on) VGS = 10V, ID = 20A
- 6 mΩ
- Gate Resistance Rg VDS = 0V, VGS =0V, f =1MHz
- 2.2 Ω
- Diode Forward Voltage2 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current1,5 IS VG=VD=0V , Force Current
- 90 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.