01 / 产品信息
产品概述
Wayon（维安） WM02DH50M3（MOSFET(小信号)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WM02DH50M3
- 品类
- 小信号MOSFET
- 封装
- SOT-23-6L
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
36 项结构与连接
- Power Dissipation1 TA=25°C
- 1 W
- VGS = 4.5V, ID = 4.5A - 25
- 34
- VGS = 2.5V, ID = 3.5A - 35
- 50
- Rev.E,2023 Doc:W0803062
- 2/8
- VGS = 4.5V, ID = 4.5A
- 25
- VGS = 2.5V, ID = 3.5A
- 35
- Input Capacitance Ciss
- 300
- Output Capacitance Coss
- 55 pF
- Reverse Transfer Capacitance Crss
- 48
- Total Gate Charge Qg
- 3.6
- Gate-Source Charge Qgs
- 0.6 nC
- Gate-Drain Charge Qgd
- 0.7
- Turn-on Delay Time td(on)
- 3.1
- Rise Time tr
- 4.6
- Turn-off Delay Time td(off)
- 11.7
- Fall Time tf
- 3.5
- VGS = -4.5V, ID = -3A
- 45
- VGS = -2.5V, ID = -1.5A
- 58
- Turn-On Delay Time td(on)
- 11
- Turn-Off Delay Time td(off)
- 23
- Fall Time4 tf
- 10
性能与环境
- Drain-Source voltage VDS 20
- 20
- Gate-Source voltage VGS ±8
- ±8
- Continuous Drain Current TA=25°C ID 5
- 3 A
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 150 °C
- Thermal Resistance from Junction to Ambient2 RθJA
- 125 °C/W
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±8V
- ±100 nA
- Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V
- 1 μA
- Body Diode Voltage3 VSD IS= 1A, VGS = 0V
- 1.2 V
- Continuous Source Current IS
- 5
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 20 V
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 0.65 V
- Continuous Source Current
- 5 A
- Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V
- 1 μA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250µA
- 0.7 V
- Body Diode Voltage3 VSD IS= -3A, VGS = 0V
- 1.2 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。