WM02DH50M3
Wayon WM02DH50M3 (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- SOT-23-6L
Product overview
Wayon WM02DH50M3 (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WM02DH50M3
- Category
- Small-Signal MOSFETs
- Package
- SOT-23-6L
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
36 parametersConstruction
- Power Dissipation1 TA=25°C
- 1 W
- VGS = 4.5V, ID = 4.5A - 25
- 34
- VGS = 2.5V, ID = 3.5A - 35
- 50
- Rev.E,2023 Doc:W0803062
- 2/8
- VGS = 4.5V, ID = 4.5A
- 25
- VGS = 2.5V, ID = 3.5A
- 35
- Input Capacitance Ciss
- 300
- Output Capacitance Coss
- 55 pF
- Reverse Transfer Capacitance Crss
- 48
- Total Gate Charge Qg
- 3.6
- Gate-Source Charge Qgs
- 0.6 nC
- Gate-Drain Charge Qgd
- 0.7
- Turn-on Delay Time td(on)
- 3.1
- Rise Time tr
- 4.6
- Turn-off Delay Time td(off)
- 11.7
- Fall Time tf
- 3.5
- VGS = -4.5V, ID = -3A
- 45
- VGS = -2.5V, ID = -1.5A
- 58
- Turn-On Delay Time td(on)
- 11
- Turn-Off Delay Time td(off)
- 23
- Fall Time4 tf
- 10
Performance
- Drain-Source voltage VDS 20
- 20
- Gate-Source voltage VGS ±8
- ±8
- Continuous Drain Current TA=25°C ID 5
- 3 A
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 150 °C
- Thermal Resistance from Junction to Ambient2 RθJA
- 125 °C/W
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±8V
- ±100 nA
- Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V
- 1 μA
- Body Diode Voltage3 VSD IS= 1A, VGS = 0V
- 1.2 V
- Continuous Source Current IS
- 5
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 20 V
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 0.65 V
- Continuous Source Current
- 5 A
- Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V
- 1 μA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250µA
- 0.7 V
- Body Diode Voltage3 VSD IS= -3A, VGS = 0V
- 1.2 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.