01 / 产品信息
产品概述
STM MOSFET STF16N60M6 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- STM
- 型号
- STF16N60M6
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- PTOT Total power dissipation at TC = 25 °C
- 25 W
- dv/dt(3) MOSFET dv/dt ruggedness
- 50 V/ns
- VISO
- 2.5 kV
- VGS = 0 V, VDS = 600
- 1
- VGS = 0 V, VDS = 600 V, TC = 125 °C
- 100
- Ciss Input capacitance
- 575 pF
- Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0
- 33 pF
- Crss Reverse transfer capacitance
- 3 pF
- Qg Total gate charge
- 16.7 nC
- Gate-drain charge
- 9.4 nC
- td(on) Turn-on delay time VDD = 300 V, ID = 6 A
- 13 ns
- tr Rise time RG = 4.7 Ω, VGS = 10
- 7.6 ns
- tf Fall time Figure 18. Switching time waveform)
- 6.8 ns
- trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs
- 210 ns
- Qrr Reverse recovery charge VDD = 60
- 1.7 μC
- Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C
- 3.2 μC
性能与环境
- VDS Drain-source voltage
- 600 V
- VGS Gate-source voltage
- ±25 V
- ID Drain current (continuous) at TC = 25 °C
- 12 A
- ID Drain current (continuous) at TC = 100 °C
- 7.6 A
- IDM(1) Drain current (pulsed)
- 32 A
- dv/dt(2) Peak diode recovery voltage slope
- 15 V/ns
- RthJC Thermal resistance, junction-to-case
- 5 °C/W
- RthJA Thermal resistance, junction-to-ambient
- 62.5 °C/W
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.2
- 5 V
- V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0
- 600 V
- IGSS Gate-body leakage current VDS = 0 V, VGS = ±25
- ±5 μA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA
- 4 V
- RDS(on) Static drain-source on resistance VGS = 10 V, ID = 6
- 260 mΩ
- Rg Gate input resistance f = 1 MHz, ID = 0
- 5.2 Ω
- ISD Source-drain current
- 12 A
- ISDM(1) Source-drain current (pulsed)
- 32 A
- VSD(2) Forward on voltage ISD = 12 A, VGS = 0
- 1.6 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。