COMPONENT PROFILE
STMMOSFETsSTF16N60M6
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
STM MOSFETs STF16N60M6 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- STM
- Part number
- STF16N60M6
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
33 parametersConstruction
- PTOT Total power dissipation at TC = 25 °C
- 25 W
- dv/dt(3) MOSFET dv/dt ruggedness
- 50 V/ns
- VISO
- 2.5 kV
- VGS = 0 V, VDS = 600
- 1
- VGS = 0 V, VDS = 600 V, TC = 125 °C
- 100
- Ciss Input capacitance
- 575 pF
- Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0
- 33 pF
- Crss Reverse transfer capacitance
- 3 pF
- Qg Total gate charge
- 16.7 nC
- Gate-drain charge
- 9.4 nC
- td(on) Turn-on delay time VDD = 300 V, ID = 6 A
- 13 ns
- tr Rise time RG = 4.7 Ω, VGS = 10
- 7.6 ns
- tf Fall time Figure 18. Switching time waveform)
- 6.8 ns
- trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs
- 210 ns
- Qrr Reverse recovery charge VDD = 60
- 1.7 μC
- Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C
- 3.2 μC
Performance
- VDS Drain-source voltage
- 600 V
- VGS Gate-source voltage
- ±25 V
- ID Drain current (continuous) at TC = 25 °C
- 12 A
- ID Drain current (continuous) at TC = 100 °C
- 7.6 A
- IDM(1) Drain current (pulsed)
- 32 A
- dv/dt(2) Peak diode recovery voltage slope
- 15 V/ns
- RthJC Thermal resistance, junction-to-case
- 5 °C/W
- RthJA Thermal resistance, junction-to-ambient
- 62.5 °C/W
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.2
- 5 V
- V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0
- 600 V
- IGSS Gate-body leakage current VDS = 0 V, VGS = ±25
- ±5 μA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA
- 4 V
- RDS(on) Static drain-source on resistance VGS = 10 V, ID = 6
- 260 mΩ
- Rg Gate input resistance f = 1 MHz, ID = 0
- 5.2 Ω
- ISD Source-drain current
- 12 A
- ISDM(1) Source-drain current (pulsed)
- 32 A
- VSD(2) Forward on voltage ISD = 12 A, VGS = 0
- 1.6 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.