01 / 产品信息
产品概述
VISHAY MOSFET SI2300DS-T1-GE3 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- VISHAY
- 型号
- SI2300DS-T1-GE3
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- Maximum junction-to-ambient b, d t5s RthJA
- 90
- Maximum junction-to-foot (drain) Steady state RthJF
- 60
- S10-0111-Rev. A, 18-Jan-10 1
- 65701
- Gate-source leakage IGSS VDS = 0 V, VGS = ± 12
- ± 100 nA
- VDS = 30 V, VGS = 0
- 1
- VDS = 30 V, VGS = 0 V, TJ = 55 °C
- 10
- VGS = 4.5 V, ID = 2.9
- 0.068
- VGS = 2.5 V, ID = 2.6
- 0.085
- Forward transconductance a gfs VDS = 15 V, ID = 2.9
- 13 S
- Input capacitance Ciss
- 320
- Output capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz
- 45 pF
- Reverse transfer capacitance Crss
- 19
- VDS = 15 V, VGS = 10 V, ID = 3.1
- 6.5
- Gate-source charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 3.1
- 0.8
- Gate-drain charge Qgd
- 0.5
- Turn-on delay time td(on)
- 10
- Rise time tr VDD = 15 V, RL = 6
- 15
- Fall time tf
- 11
- Body diode reverse recovery time trr
- 11 ns
- Reverse recovery fall time ta TJ = 25 °C
- 7
- Reverse recovery rise time tb
- 4
性能与环境
- Drain-source voltage
- 30
- Gate-source voltage
- ± 12
- Operating junction and storage temperature range TJ, Tstg -5
- 5 to +150
- Soldering recommendations (peak temperature) d, e
- 260
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA
- 30 V
- VDS temperature coefficient VDS/TJ
- 21
- VGS(th) temperature coefficient VGS(th)/TJ
- 3.2
- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA
- 1.5 V
- On-state drain current a ID(on) VDS 5 V, VGS = 10
- 10 A
- Gate resistance Rg f = 1 MHz
- 3.2
- Continuous source-drain diode current IS TC = 25 °C
- 1.4
- Body diode voltage VSD IS = 2.5 A, VGS = 0
- 0.8 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。