COMPONENT PROFILE
VISHAYMOSFETsSI2300DS-T1-GE3
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
VISHAY MOSFETs SI2300DS-T1-GE3 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- VISHAY
- Part number
- SI2300DS-T1-GE3
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
33 parametersConstruction
- Maximum junction-to-ambient b, d t5s RthJA
- 90
- Maximum junction-to-foot (drain) Steady state RthJF
- 60
- S10-0111-Rev. A, 18-Jan-10 1
- 65701
- Gate-source leakage IGSS VDS = 0 V, VGS = ± 12
- ± 100 nA
- VDS = 30 V, VGS = 0
- 1
- VDS = 30 V, VGS = 0 V, TJ = 55 °C
- 10
- VGS = 4.5 V, ID = 2.9
- 0.068
- VGS = 2.5 V, ID = 2.6
- 0.085
- Forward transconductance a gfs VDS = 15 V, ID = 2.9
- 13 S
- Input capacitance Ciss
- 320
- Output capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz
- 45 pF
- Reverse transfer capacitance Crss
- 19
- VDS = 15 V, VGS = 10 V, ID = 3.1
- 6.5
- Gate-source charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 3.1
- 0.8
- Gate-drain charge Qgd
- 0.5
- Turn-on delay time td(on)
- 10
- Rise time tr VDD = 15 V, RL = 6
- 15
- Fall time tf
- 11
- Body diode reverse recovery time trr
- 11 ns
- Reverse recovery fall time ta TJ = 25 °C
- 7
- Reverse recovery rise time tb
- 4
Performance
- Drain-source voltage
- 30
- Gate-source voltage
- ± 12
- Operating junction and storage temperature range TJ, Tstg -5
- 5 to +150
- Soldering recommendations (peak temperature) d, e
- 260
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA
- 30 V
- VDS temperature coefficient VDS/TJ
- 21
- VGS(th) temperature coefficient VGS(th)/TJ
- 3.2
- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA
- 1.5 V
- On-state drain current a ID(on) VDS 5 V, VGS = 10
- 10 A
- Gate resistance Rg f = 1 MHz
- 3.2
- Continuous source-drain diode current IS TC = 25 °C
- 1.4
- Body diode voltage VSD IS = 2.5 A, VGS = 0
- 0.8 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.