01 / 产品信息
产品概述
onsemi NTA4153NT1G（MOSFET-小信号(N-channel)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 安森美
- 型号
- NTA4153NT1G
- 品类
- MOSFET-小信号(N-channel)
- 封装
- SC-75-3
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
32 项结构与连接
- Continuous Drain Steady TA = 25 °C
- 915 mA
- Power Dissipation Steady State
- 300 mW
- TSTG
- 150 3Drain
- SC-75 /
- 416
- SC-89
- 400
- VGS = 2.5 V, ID = 500 mA
- 170
- VGS = 1.8 V, ID = 350 mA
- 242
- VGS = 1.5 V, ID = 40 mA
- 500
- Forward Transconductance gFS VDS = 10 V, ID = 400 mA
- 1.4 S
- Input Capacitance CISS VGS = 0 V, f = 1.0 MHz
- 110 pF
- Output Capacitance
- 16
- Reverse Transfer Capacitance
- 12
- Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 10 V
- 1 nC
- Threshold Gate Charge QG(TH)
- 0.2
- Gate-to-Source Charge
- 0.3
- Gate-to-Drain Charge
- 0
- Turn-On Delay Time td(ON) VGS = 4.5 V, VDD = 10 V
- 3.7 ns
- Rise Time tr
- 4.4
- Turn-Off Delay Time td(OFF)
- 25
- Fall Time tf
- 7.6
- IS = 200 mA TJ = 125 °C
- 0
性能与环境
- Drain-to-Source Voltage
- 20 V
- Gate-to-Source Voltage
- ±6.0
- Operating Junction and Storage Temperature TJ
- −55 to °C
- Continuous Source Current (Body Diode)
- 280 mA
- Lead Temperature for Soldering Purposes
- 260
- Drain-to-Source Breakdown Voltage V(BR)DSS/TJ
- 8.4 V/°C
- Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16
- 100 nA
- Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5
- ±1.0 mA
- Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA
- 1.1 V
- Negative Threshold Temperature VGS(TH)/TJ
- 2.15 V/°C
- Forward Diode Voltage VSD VGS = 0 V, TJ = 25 °C
- 1.1 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。