NTA4153NT1G
onsemi NTA4153NT1G (MOSFET - Small Signal (N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- SC-75-3
Product overview
onsemi NTA4153NT1G (MOSFET - Small Signal (N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- onsemi
- Part number
- NTA4153NT1G
- Category
- Small-Signal N-Channel MOSFETs
- Package
- SC-75-3
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
32 parametersConstruction
- Continuous Drain Steady TA = 25 °C
- 915 mA
- Power Dissipation Steady State
- 300 mW
- TSTG
- 150 3Drain
- SC-75 /
- 416
- SC-89
- 400
- VGS = 2.5 V, ID = 500 mA
- 170
- VGS = 1.8 V, ID = 350 mA
- 242
- VGS = 1.5 V, ID = 40 mA
- 500
- Forward Transconductance gFS VDS = 10 V, ID = 400 mA
- 1.4 S
- Input Capacitance CISS VGS = 0 V, f = 1.0 MHz
- 110 pF
- Output Capacitance
- 16
- Reverse Transfer Capacitance
- 12
- Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 10 V
- 1 nC
- Threshold Gate Charge QG(TH)
- 0.2
- Gate-to-Source Charge
- 0.3
- Gate-to-Drain Charge
- 0
- Turn-On Delay Time td(ON) VGS = 4.5 V, VDD = 10 V
- 3.7 ns
- Rise Time tr
- 4.4
- Turn-Off Delay Time td(OFF)
- 25
- Fall Time tf
- 7.6
- IS = 200 mA TJ = 125 °C
- 0
Performance
- Drain-to-Source Voltage
- 20 V
- Gate-to-Source Voltage
- ±6.0
- Operating Junction and Storage Temperature TJ
- −55 to °C
- Continuous Source Current (Body Diode)
- 280 mA
- Lead Temperature for Soldering Purposes
- 260
- Drain-to-Source Breakdown Voltage V(BR)DSS/TJ
- 8.4 V/°C
- Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16
- 100 nA
- Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5
- ±1.0 mA
- Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA
- 1.1 V
- Negative Threshold Temperature VGS(TH)/TJ
- 2.15 V/°C
- Forward Diode Voltage VSD VGS = 0 V, TJ = 25 °C
- 1.1 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.