01 / 产品信息
产品概述
onsemi MMBT3906LT1G（双极型晶体管(BJT)-通用(PNP)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 安森美
- 型号
- MMBT3906LT1G
- 品类
- 双极型晶体管(BJT)-通用(PNP)
- 封装
- SOT-23
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
28 项结构与连接
- Substrate, (Note 2) @ TA = 25 °C
- 300 mW
- (IC = −1.0 mAdc, IB = 0)
- −40
- (IC = −10 mAdc, IE = 0)
- −40
- (IE = −10 mAdc, IC = 0)
- −5.0
- (VCE = −30 Vdc, VEB = −3.0 Vdc)
- −50
- (IC = −0.1 mAdc, VCE = −1.0 Vdc)
- 60
- (IC = −1.0 mAdc, VCE = −1.0 Vdc)
- 80
- (IC = −10 mAdc, VCE = −1.0 Vdc)
- 300
- (IC = −50 mAdc, VCE = −1.0 Vdc)
- 60
- (IC = −100 mAdc, VCE = −1.0 Vdc)
- 30
- (IC = −10 mAdc, IB = −1.0 mAdc)
- 0.25
- (IC = −50 mAdc, IB = −5.0 mAdc)
- 0.4
- (IC = −10 mAdc, IB = −1.0 mAdc) −
- 0.85
- (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
- 250
- (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
- 4.5
- (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
- 10
- (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
- 12
- (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
- 4.0
- Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc, td
- 35
- Rise Time IC = −10 mAdc, IB1 = −1.0 mAdc) tr
- 35
- Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc, ts
- 225
- Fall Time IB1 = IB2 = −1.0 mAdc) tf
- 75
性能与环境
- Collector −Emitter Voltage
- −40 Vdc
- Collector −Base Voltage
- −40 Vdc
- Emitter −Base Voltage
- −5.0 Vdc
- Collector Current − Continuous
- −200 mAdc
- Collector Current − Peak (Note 3)
- −800 mAdcG
- Thermal Resistance, Junction−to−Ambient RqJA
- 556
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。