onsemi / General-Purpose Bipolar Transistors (BJT, PNP)

MMBT3906LT1G

Name: MMBT3906LT1G onsemi
Brand: onsemi
SKU: mmbt3906lt1g
Availability: InStock

onsemi MMBT3906LT1G (Bipolar Transistor (BJT) - General Purpose (PNP)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing

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COMPONENT PROFILE

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓

Package reference · Not a dimension drawing

Package: SOT-23

01 / PRODUCT INFORMATION

Product overview

Manufacturer: onsemi
Part number: MMBT3906LT1G
Category: General-Purpose Bipolar Transistors (BJT, PNP)
Package: SOT-23
Condition: New & Original
Lifecycle: Confirm with manufacturer
Lead time / MOQ: Confirm with quotation

02 / TECHNICAL DETAILS

Technical parameters

28 parameters

Construction

Substrate, (Note 2) @ TA = 25 °C: 300 mW
(IC = −1.0 mAdc, IB = 0): −40
(IC = −10 mAdc, IE = 0): −40
(IE = −10 mAdc, IC = 0): −5.0
(VCE = −30 Vdc, VEB = −3.0 Vdc): −50
(IC = −0.1 mAdc, VCE = −1.0 Vdc): 60
(IC = −1.0 mAdc, VCE = −1.0 Vdc): 80
(IC = −10 mAdc, VCE = −1.0 Vdc): 300
(IC = −50 mAdc, VCE = −1.0 Vdc): 60
(IC = −100 mAdc, VCE = −1.0 Vdc): 30
(IC = −10 mAdc, IB = −1.0 mAdc): 0.25
(IC = −50 mAdc, IB = −5.0 mAdc): 0.4
(IC = −10 mAdc, IB = −1.0 mAdc) −: 0.85
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz): 250
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz): 4.5
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz): 10
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz): 12
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz): 4.0
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc, td: 35
Rise Time IC = −10 mAdc, IB1 = −1.0 mAdc) tr: 35
Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc, ts: 225
Fall Time IB1 = IB2 = −1.0 mAdc) tf: 75

Performance

Collector −Emitter Voltage: −40 Vdc
Collector −Base Voltage: −40 Vdc
Emitter −Base Voltage: −5.0 Vdc
Collector Current − Continuous: −200 mAdc
Collector Current − Peak (Note 3): −800 mAdcG
Thermal Resistance, Junction−to−Ambient RqJA: 556

03 / RESOURCES

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Official product pageProduct information from the manufacturer Official datasheetTechnical specifications and reference material

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