01 / 产品信息
产品概述
onsemi MMBT3904LT1G（双极型晶体管(BJT)-通用(NPN)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 安森美
- 型号
- MMBT3904LT1G
- 品类
- 双极型晶体管(BJT)-通用(NPN)
- 封装
- SOT-23
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
23 项结构与连接
- (IC = 0.1 mAdc, VCE = 1.0 Vdc)
- 40
- (IC = 1.0 mAdc, VCE = 1.0 Vdc)
- 70
- (IC = 10 mAdc, VCE = 1.0 Vdc)
- 300
- (IC = 50 mAdc, VCE = 1.0 Vdc)
- 60
- (IC = 100 mAdc, VCE = 1.0 Vdc)
- 30
- (IC = 10 mAdc, IB = 1.0 mAdc)
- 0.2
- (IC = 50 mAdc, IB = 5.0 mAdc)
- 0.3
- Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo
- 4.0 pF
- Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo
- 8.0 pF
- Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, td
- 35
- Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr
- 35
- Storage Time (VCC = 3.0 Vdc, ts
- 200
- Fall Time IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf
- 50
- 10 k
- 10 k
- < 1 ns CS < 4 pF*
- 1N916 CS<4pF*
性能与环境
- Collector - Emitter Voltage
- 40 Vdc
- Collector - Base Voltage
- 60 Vdc
- Emitter - Base Voltage
- 6.0 Vdc
- Collector Current - Continuous
- 200
- Collector Current - Peak (Note 3)
- 900 mAdc
- Thermal Resistance, Junction-to-Ambient RqJA
- 556
- Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
- 50 nAdc
- Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
- 50 nAdc
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。