MMBT3904LT1G
onsemi MMBT3904LT1G (Bipolar Transistor (BJT) - General Purpose (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
onsemi MMBT3904LT1G (Bipolar Transistor (BJT) - General Purpose (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- onsemi
- Part number
- MMBT3904LT1G
- Category
- General-Purpose Bipolar Transistors (BJT, NPN)
- Package
- SOT-23
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
23 parametersConstruction
- (IC = 0.1 mAdc, VCE = 1.0 Vdc)
- 40
- (IC = 1.0 mAdc, VCE = 1.0 Vdc)
- 70
- (IC = 10 mAdc, VCE = 1.0 Vdc)
- 300
- (IC = 50 mAdc, VCE = 1.0 Vdc)
- 60
- (IC = 100 mAdc, VCE = 1.0 Vdc)
- 30
- (IC = 10 mAdc, IB = 1.0 mAdc)
- 0.2
- (IC = 50 mAdc, IB = 5.0 mAdc)
- 0.3
- Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo
- 4.0 pF
- Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo
- 8.0 pF
- Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, td
- 35
- Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr
- 35
- Storage Time (VCC = 3.0 Vdc, ts
- 200
- Fall Time IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf
- 50
- 10 k
- 10 k
- < 1 ns CS < 4 pF*
- 1N916 CS<4pF*
Performance
- Collector - Emitter Voltage
- 40 Vdc
- Collector - Base Voltage
- 60 Vdc
- Emitter - Base Voltage
- 6.0 Vdc
- Collector Current - Continuous
- 200
- Collector Current - Peak (Note 3)
- 900 mAdc
- Thermal Resistance, Junction-to-Ambient RqJA
- 556
- Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
- 50 nAdc
- Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
- 50 nAdc
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.