01 / 产品信息
产品概述
Longteng (龙腾半导体) LSE65R099GF（SJ MOSFET(超级结)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 龙腾
- 型号
- LSE65R099GF
- 品类
- SJ MOSFET(超级结)
- 封装
- TO-263
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- ( TC = 100°C )
- 25.3 A
- Avalanche energy, single pulse 2)
- 655 mJ
- Power Dissipation
- 373 W
- RθJA
- 62 °C/W
- Tsold
- 260 °C
- Input capacitance Ciss VDS = 100 V, VGS = 0 V
- 3250
- Output capacitance Coss f = 250kHz
- 115 pF
- Reverse transfer capacitance Crss
- 4.5
- Turn-on delay time td(on) VDD = 400V, ID = 20A
- 81
- Rise time tr RG = 10Ω, VGS=10V
- 35.5
- Turn-off delay time td(off)
- 108
- Fall time tf
- 6
- Gate to source charge Qgs VDD=520 V, ID=20A
- 16.5
- Gate to drain charge Qgd VGS=0 to 10
- 28.3 nC
- Gate charge total Qg
- 71.3
- Reverse recovery time trr
- 167 ns
- Reverse recovery charge Qrr
- 1.37 μC
性能与环境
- Drain-Source Voltage
- 650 V
- Continuous drain current ( TC = 25°C )
- 40 A
- Gate-Source voltage
- ±30 V
- Operating and Storage Temperature Range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 40 A
- Diode pulse current IS,pulse
- 120 A
- Thermal Resistance, Junction-to-Case RθJC
- 0.34 °C/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
- 650 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA
- 3.0 V
- Drain cut-off current IDSS VDS=650 V, VGS=0 V,Tj = 25°C
- 5 μA
- Gate leakage current, Forward IGSSF VGS=30 V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0
- 100 nA
- Gate resistance RG f=1 MHz, open drain
- 4.0 Ω
- Gate plateau voltage Vplateau
- 5.5 V
- Diode forward voltage VSD VGS=0 V, IF=40A
- 1.1 V
- Peak reverse recovery current Irrm
- 15.5 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。