LSE65R099GF
Longteng LSE65R099GF (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-263
Product overview
Longteng LSE65R099GF (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- lonten
- Part number
- LSE65R099GF
- Category
- Super-Junction MOSFETs
- Package
- TO-263
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
33 parametersConstruction
- ( TC = 100°C )
- 25.3 A
- Avalanche energy, single pulse 2)
- 655 mJ
- Power Dissipation
- 373 W
- RθJA
- 62 °C/W
- Tsold
- 260 °C
- Input capacitance Ciss VDS = 100 V, VGS = 0 V
- 3250
- Output capacitance Coss f = 250kHz
- 115 pF
- Reverse transfer capacitance Crss
- 4.5
- Turn-on delay time td(on) VDD = 400V, ID = 20A
- 81
- Rise time tr RG = 10Ω, VGS=10V
- 35.5
- Turn-off delay time td(off)
- 108
- Fall time tf
- 6
- Gate to source charge Qgs VDD=520 V, ID=20A
- 16.5
- Gate to drain charge Qgd VGS=0 to 10
- 28.3 nC
- Gate charge total Qg
- 71.3
- Reverse recovery time trr
- 167 ns
- Reverse recovery charge Qrr
- 1.37 μC
Performance
- Drain-Source Voltage
- 650 V
- Continuous drain current ( TC = 25°C )
- 40 A
- Gate-Source voltage
- ±30 V
- Operating and Storage Temperature Range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 40 A
- Diode pulse current IS,pulse
- 120 A
- Thermal Resistance, Junction-to-Case RθJC
- 0.34 °C/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
- 650 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA
- 3.0 V
- Drain cut-off current IDSS VDS=650 V, VGS=0 V,Tj = 25°C
- 5 μA
- Gate leakage current, Forward IGSSF VGS=30 V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0
- 100 nA
- Gate resistance RG f=1 MHz, open drain
- 4.0 Ω
- Gate plateau voltage Vplateau
- 5.5 V
- Diode forward voltage VSD VGS=0 V, IF=40A
- 1.1 V
- Peak reverse recovery current Irrm
- 15.5 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.