01 / 产品信息
产品概述
Longteng (龙腾半导体) LSD65R180GMB（SJ MOSFET(超级结)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 龙腾
- 型号
- LSD65R180GMB
- 品类
- SJ MOSFET(超级结)
- 封装
- TO-220F
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
34 项结构与连接
- ( TC = 100°C )
- 13.2 A
- Avalanche energy, single pulse 3)
- 600 mJ
- Power Dissipation
- 34 W
- RθJA
- 62 °C/W
- Tsold
- 260 °C
- LSD65R180GMB TO-220F
- 5R180GMB 50
- Input capacitance Ciss
- 832.55
- Output capacitance Coss
- 72.26 pF
- Reverse transfer capacitance Crss
- 0.72
- Turn-on delay time td(on)
- 77.1
- Rise time tr VDD =400V, ID=10A
- 14.7
- Turn-off delay time td(off) RG = 10Ω, VGS=10V
- 64.4
- Fall time tf
- 6.2
- Gate to source charge Qgs
- 10.2
- Gate to drain charge Qgd VDD=520V, ID=10A
- 14.9 nC
- Gate charge total Qg VGS=0 to 10
- 38.4
- Reverse recovery time trr
- 302.8 ns
- Reverse recovery charge Qrr
- 616.0 nC
性能与环境
- Drain-Source Voltage
- 650 V
- Continuous drain current 1) ( TC = 25°C )
- 21 A
- Gate-Source voltage
- ±30 V
- Operating and Storage Temperature Range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 21 A
- Diode pulse current IS,pulse
- 63 A
- Thermal Resistance, Junction-to-Case RθJC
- 3.7 °C/W
- Drain-source breakdown voltage BVDSS VGS=0V, ID=250uA
- 650 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=250uA
- 3.8 V
- Drain cut-off current IDSS VDS=650V, VGS=0 V,Tj =25°C
- 1 μA
- Gate leakage current, Forward IGSSF VGS=30V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-30V, VDS=0
- 100 nA
- Gate resistance RG f=1 MHz, open drain
- 5.19 Ω
- Gate plateau voltage Vplateau
- 5.9 V
- Diode forward voltage VSD VGS=0 V, IF=10A
- 1.1 V
- Peak reverse recovery current Irrm
- 25.98 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。