LSD65R180GMB
Longteng LSD65R180GMB (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220F
Product overview
Longteng LSD65R180GMB (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- lonten
- Part number
- LSD65R180GMB
- Category
- Super-Junction MOSFETs
- Package
- TO-220F
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
34 parametersConstruction
- ( TC = 100°C )
- 13.2 A
- Avalanche energy, single pulse 3)
- 600 mJ
- Power Dissipation
- 34 W
- RθJA
- 62 °C/W
- Tsold
- 260 °C
- LSD65R180GMB TO-220F
- 5R180GMB 50
- Input capacitance Ciss
- 832.55
- Output capacitance Coss
- 72.26 pF
- Reverse transfer capacitance Crss
- 0.72
- Turn-on delay time td(on)
- 77.1
- Rise time tr VDD =400V, ID=10A
- 14.7
- Turn-off delay time td(off) RG = 10Ω, VGS=10V
- 64.4
- Fall time tf
- 6.2
- Gate to source charge Qgs
- 10.2
- Gate to drain charge Qgd VDD=520V, ID=10A
- 14.9 nC
- Gate charge total Qg VGS=0 to 10
- 38.4
- Reverse recovery time trr
- 302.8 ns
- Reverse recovery charge Qrr
- 616.0 nC
Performance
- Drain-Source Voltage
- 650 V
- Continuous drain current 1) ( TC = 25°C )
- 21 A
- Gate-Source voltage
- ±30 V
- Operating and Storage Temperature Range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 21 A
- Diode pulse current IS,pulse
- 63 A
- Thermal Resistance, Junction-to-Case RθJC
- 3.7 °C/W
- Drain-source breakdown voltage BVDSS VGS=0V, ID=250uA
- 650 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=250uA
- 3.8 V
- Drain cut-off current IDSS VDS=650V, VGS=0 V,Tj =25°C
- 1 μA
- Gate leakage current, Forward IGSSF VGS=30V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-30V, VDS=0
- 100 nA
- Gate resistance RG f=1 MHz, open drain
- 5.19 Ω
- Gate plateau voltage Vplateau
- 5.9 V
- Diode forward voltage VSD VGS=0 V, IF=10A
- 1.1 V
- Peak reverse recovery current Irrm
- 25.98 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.