01 / 产品信息
产品概述
Longteng (龙腾半导体) LND20N50W（MOSFET(高压)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 龙腾
- 型号
- LND20N50W
- 品类
- MOSFET(高压)
- 封装
- TO-220F
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
32 项结构与连接
- ( TC = 100°C )
- 12.5 A
- IDM
- 80 A
- EAS
- 1200 mJ
- Power Dissipation ( TC = 25°C )
- 37.8 W
- RθJA
- 60 °C/W
- Input capacitance Ciss VDS = 25 V, VGS = 0 V
- 3078
- Output capacitance Coss f = 250kHz
- 263 pF
- Reverse transfer capacitance Crss
- 19
- Turn-on delay time td(on) VDD = 250 V, ID = 10
- 22.7
- Rise time tr RG = 5Ω, VGS=15
- 16.4 ns
- Turn-off delay time td(off)
- 127
- Fall time tf
- 15.2
- Gate to source charge Qgs VDD=400 V, ID=20 A
- 12.7
- Gate to drain charge Qgd VGS=0 to 10
- 15.8 nC
- Gate charge total Qg
- 50.5
- Reverse recovery time trr VR=250 V, IF=20 A
- 313.2 ns
- Reverse recovery charge Qrr dIF/dt=100 A/μs
- 3.3 μC
性能与环境
- Drain-Source Voltage
- 500 V
- Continuous drain current ( TC = 25°C )
- 20 A
- Gate-Source voltage
- ±30 V
- Operating junction and storage temperature range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 20 A
- Diode pulse current IS,pulse
- 80 A
- Thermal resistance, Junction-to-case RθJC
- 3.3 °C/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
- 500 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA
- 2 V
- Gate leakage current, Forward IGSSF VGS=20 V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0
- 100 nA
- Drain-source on-state resistance RDS(on) VGS=10 V, ID=10A
- 0.23 Ω
- Gate plateau voltage Vplateau
- 5 V
- Diode forward voltage VSD VGS=0 V, IF=10
- 1.3 V
- Peak reverse recovery current Irrm
- 20.8 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。