LND20N50W
Longteng LND20N50W (high-voltage MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220F
Product overview
Longteng LND20N50W (high-voltage MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- lonten
- Part number
- LND20N50W
- Category
- High-Voltage MOSFETs
- Package
- TO-220F
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
32 parametersConstruction
- ( TC = 100°C )
- 12.5 A
- IDM
- 80 A
- EAS
- 1200 mJ
- Power Dissipation ( TC = 25°C )
- 37.8 W
- RθJA
- 60 °C/W
- Input capacitance Ciss VDS = 25 V, VGS = 0 V
- 3078
- Output capacitance Coss f = 250kHz
- 263 pF
- Reverse transfer capacitance Crss
- 19
- Turn-on delay time td(on) VDD = 250 V, ID = 10
- 22.7
- Rise time tr RG = 5Ω, VGS=15
- 16.4 ns
- Turn-off delay time td(off)
- 127
- Fall time tf
- 15.2
- Gate to source charge Qgs VDD=400 V, ID=20 A
- 12.7
- Gate to drain charge Qgd VGS=0 to 10
- 15.8 nC
- Gate charge total Qg
- 50.5
- Reverse recovery time trr VR=250 V, IF=20 A
- 313.2 ns
- Reverse recovery charge Qrr dIF/dt=100 A/μs
- 3.3 μC
Performance
- Drain-Source Voltage
- 500 V
- Continuous drain current ( TC = 25°C )
- 20 A
- Gate-Source voltage
- ±30 V
- Operating junction and storage temperature range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 20 A
- Diode pulse current IS,pulse
- 80 A
- Thermal resistance, Junction-to-case RθJC
- 3.3 °C/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
- 500 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA
- 2 V
- Gate leakage current, Forward IGSSF VGS=20 V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0
- 100 nA
- Drain-source on-state resistance RDS(on) VGS=10 V, ID=10A
- 0.23 Ω
- Gate plateau voltage Vplateau
- 5 V
- Diode forward voltage VSD VGS=0 V, IF=10
- 1.3 V
- Peak reverse recovery current Irrm
- 20.8 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.