01 / 产品信息
产品概述
Leshan Radio (乐山无线电) L2N7002LT1G（MOSFET）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- LRC
- 型号
- L2N7002LT1G
- 品类
- MOSFET
- 封装
- SOT-23
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
27 项结构与连接
- Continuous TC = 25°C
- ±115
- Continuous
- ±20 Vdc
- Non–repetitive (tp≤50μs)
- ±40 Vdc
- Total Device Dissipation
- 225 mW
- Leshan Radio Company, LTD. Rev.B Mar
- 2016 1/6
- (VGS = 0, ID = 10μAdc)
- 60
- (VGS = 0, VDS = 60 Vdc) TJ = 125°C
- 500
- (VGS = 20 Vdc)
- 1.0
- (VGS = - 20 Vdc)
- 1.0
- (VDS = VGS, ID = 250μAdc)
- 1.6
- (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) 5
- 00
- (VGS = 10 Vdc, ID = 500 mAdc)
- 3.75
- (VGS = 5.0 Vdc, ID = 50 mAdc)
- 0.375
- (VGS = 10 Vdc, ID = 500 mAdc) TC = 25°C
- 1.4
- (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
- 1.8
- (VDS≥ 2.0 VDS(on), ID = 200 mAdc)
- 80
- (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
- 17
- Turn-On Delay Time td(on)
- 7
- Turn-Off Delay Time td(off)
- 11
- (IS = 115 mAdc, VGS = 0 V)
- 1.5
性能与环境
- Drain–Source Voltage
- 60 Vdc
- Drain–Gate Voltage (RGS = 1.0 MΩ)
- 60 Vdc
- Thermal Resistance, RΘJA
- 556 ºC/W
- Junction and Storage temperature TJ,Tstg −5
- 5∼+150 ºC
- Zero Gate Voltage Drain Current TJ = 25°C
- 1.0 Adc
- Source Current Continuous (Body Diode)
- 115 Adc
- Source Current Pulsed
- 800 Adc
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。