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LRC / MOSFETs

L2N7002LT1G

Leshan Radio L2N7002LT1G (MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

Leshan Radio L2N7002LT1G (MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.

Manufacturer
LRC
Part number
L2N7002LT1G
Category
MOSFETs
Package
SOT-23
Packaging
Tape & Reel
Condition
New & Original
Compliance
RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

27 parameters

Construction

Continuous TC = 25°C
±115
Continuous
±20 Vdc
Non–repetitive (tp≤50μs)
±40 Vdc
Total Device Dissipation
225 mW
Leshan Radio Company, LTD. Rev.B Mar
2016 1/6
(VGS = 0, ID = 10μAdc)
60
(VGS = 0, VDS = 60 Vdc) TJ = 125°C
500
(VGS = 20 Vdc)
1.0
(VGS = - 20 Vdc)
1.0
(VDS = VGS, ID = 250μAdc)
1.6
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) 5
00
(VGS = 10 Vdc, ID = 500 mAdc)
3.75
(VGS = 5.0 Vdc, ID = 50 mAdc)
0.375
(VGS = 10 Vdc, ID = 500 mAdc) TC = 25°C
1.4
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
1.8
(VDS≥ 2.0 VDS(on), ID = 200 mAdc)
80
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
17
Turn-On Delay Time td(on)
7
Turn-Off Delay Time td(off)
11
(IS = 115 mAdc, VGS = 0 V)
1.5

Performance

Drain–Source Voltage
60 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
60 Vdc
Thermal Resistance, RΘJA
556 ºC/W
Junction and Storage temperature TJ,Tstg −5
5∼+150 ºC
Zero Gate Voltage Drain Current TJ = 25°C
1.0 Adc
Source Current Continuous (Body Diode)
115 Adc
Source Current Pulsed
800 Adc

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.