01 / 产品信息
产品概述
Infineon IRFR4620PBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRFR4620PBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- DPAK
- 包装
- 管装
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
31 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation 1
- 44 W
- dv/dt Peak Diode Recovery e
- 54 V/ns
- EAS (Thermally limited) Single Pulse Avalanche Energy d 1
- 13 mJ
- RθJC Junction-to-Casej
- 1.045
- RθJA Junction-to-Ambient (PCB Mount) i
- 50 °C/W
- RθJA Junction-to-Ambient
- 110
- gfs Forward Transconductance
- 37
- Qg Total Gate Charge
- 25 38ID=15A
- Qgs Gate-to-Source Charge
- 8.2
- Qgd Gate-to-Drain ("Miller") Charge
- 7.9
- Qsync Total Gate Charge Sync. (Qg - Qgd)
- 17
- td(on) Turn-On Delay Time
- 3.4
- tr Rise Time
- 2.4
- td(off) Turn-Off Delay Time
- 5.4
- tf Fall Time
- 4.8
- Ciss Input Capacitance
- 710
- Coss Output Capacitance
- 125
- Crss Reverse Transfer Capacitance
- 30
- Coss eff. (TR) Effective Output Capacitance (Time Related)
- 317
- trr Reverse Recovery Time
- 78
- Qrr Reverse Recovery Charge
- 294
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 24
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 17 A
- IDM Pulsed Drain Current c 1
- 00
- VGS Gate-to-Source Voltage ±
- 20 V
- Soldering Temperature, for 10 seconds
- 300
- IAR Avalanche Current c See Fig. 14
- 15, 22a, 22b, A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 0
- RDS(on) Static Drain-to-Source On-Resistance
- 64
- VGS(th) Gate Threshold Voltage
- 0
- IRRM Reverse Recovery Current
- 7.6
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。