IRFR4620PBF
Infineon IRFR4620PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- DPAK
Product overview
Infineon IRFR4620PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRFR4620PBF
- Category
- HEXFET Power MOSFETs
- Package
- DPAK
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
31 parametersConstruction
- PD @TC = 25°C Maximum Power Dissipation 1
- 44 W
- dv/dt Peak Diode Recovery e
- 54 V/ns
- EAS (Thermally limited) Single Pulse Avalanche Energy d 1
- 13 mJ
- RθJC Junction-to-Casej
- 1.045
- RθJA Junction-to-Ambient (PCB Mount) i
- 50 °C/W
- RθJA Junction-to-Ambient
- 110
- gfs Forward Transconductance
- 37
- Qg Total Gate Charge
- 25 38ID=15A
- Qgs Gate-to-Source Charge
- 8.2
- Qgd Gate-to-Drain ("Miller") Charge
- 7.9
- Qsync Total Gate Charge Sync. (Qg - Qgd)
- 17
- td(on) Turn-On Delay Time
- 3.4
- tr Rise Time
- 2.4
- td(off) Turn-Off Delay Time
- 5.4
- tf Fall Time
- 4.8
- Ciss Input Capacitance
- 710
- Coss Output Capacitance
- 125
- Crss Reverse Transfer Capacitance
- 30
- Coss eff. (TR) Effective Output Capacitance (Time Related)
- 317
- trr Reverse Recovery Time
- 78
- Qrr Reverse Recovery Charge
- 294
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 24
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 17 A
- IDM Pulsed Drain Current c 1
- 00
- VGS Gate-to-Source Voltage ±
- 20 V
- Soldering Temperature, for 10 seconds
- 300
- IAR Avalanche Current c See Fig. 14
- 15, 22a, 22b, A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 0
- RDS(on) Static Drain-to-Source On-Resistance
- 64
- VGS(th) Gate Threshold Voltage
- 0
- IRRM Reverse Recovery Current
- 7.6
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.