01 / 产品信息
产品概述
Infineon IRFB4115PBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRFB4115PBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TO-220
- 包装
- TUBE
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
38 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation
- 380 W
- Linear Derating Factor
- 2.5 W/°C
- dv/dt Peak Diode Recovery
- 18 V/ns
- 55 to
- + 175
- EAS Single Pulse Avalanche Energy (Thermally Limited)
- 830 mJ
- RJC Junction-to-Case
- 0.4
- RCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RJA Junction-to-Ambient
- 62
- IGSS Gate-to-Source Forward Leakage
- 10
- Gate-to-Source Reverse Leakage
- 10
- gfs Forward Trans conductance
- 97
- Qg Total Gate Charge
- 77 ID=62A
- Qgs Gate-to-Source Charge
- 28 VDS=75V
- Qgd Gate-to-Drain Charge
- 26 VGS=10V
- Qsync Total Gate Charge Sync. (Qg - Qgd)
- 51
- td(on) Turn-On Delay Time
- 18 VDD=98V
- tr Rise Time
- 73 ID=62A
- td(off) Turn-Off Delay Time
- 41 RG=2.2
- tf Fall Time
- 39 VGS=10V
- Ciss Input Capacitance
- 270 VGS=0V
- Coss Output Capacitance
- 490 VDS=50V
- Crss Reverse Transfer Capacitance
- 105
- Coss eff.(ER) Effective Output Capacitance (Energy Related)
- 460
- Coss eff.(TR) Effective Output Capacitance (Time Related)
- 530
- IS
- 104
- ISM
- 420
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 104
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 74 A
- IDM Pulsed Drain Current
- 420
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 150
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 0.18
- RDS(on) Static Drain-to-Source On-Resistance
- 9.3
- VGS(th) Gate Threshold Voltage
- 5
- RG Gate Resistance
- 2.3
- VSD Diode Forward Voltage
- 1.3
- IRRM Reverse Recovery Current
- 6.5 ATJ=25°C
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。