IRFB4115PBF
Infineon IRFB4115PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TO-220
Product overview
Infineon IRFB4115PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRFB4115PBF
- Category
- HEXFET Power MOSFETs
- Package
- TO-220
- Packaging
- TUBE
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
38 parametersConstruction
- PD @TC = 25°C Maximum Power Dissipation
- 380 W
- Linear Derating Factor
- 2.5 W/°C
- dv/dt Peak Diode Recovery
- 18 V/ns
- 55 to
- + 175
- EAS Single Pulse Avalanche Energy (Thermally Limited)
- 830 mJ
- RJC Junction-to-Case
- 0.4
- RCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RJA Junction-to-Ambient
- 62
- IGSS Gate-to-Source Forward Leakage
- 10
- Gate-to-Source Reverse Leakage
- 10
- gfs Forward Trans conductance
- 97
- Qg Total Gate Charge
- 77 ID=62A
- Qgs Gate-to-Source Charge
- 28 VDS=75V
- Qgd Gate-to-Drain Charge
- 26 VGS=10V
- Qsync Total Gate Charge Sync. (Qg - Qgd)
- 51
- td(on) Turn-On Delay Time
- 18 VDD=98V
- tr Rise Time
- 73 ID=62A
- td(off) Turn-Off Delay Time
- 41 RG=2.2
- tf Fall Time
- 39 VGS=10V
- Ciss Input Capacitance
- 270 VGS=0V
- Coss Output Capacitance
- 490 VDS=50V
- Crss Reverse Transfer Capacitance
- 105
- Coss eff.(ER) Effective Output Capacitance (Energy Related)
- 460
- Coss eff.(TR) Effective Output Capacitance (Time Related)
- 530
- IS
- 104
- ISM
- 420
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 104
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 74 A
- IDM Pulsed Drain Current
- 420
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 150
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 0.18
- RDS(on) Static Drain-to-Source On-Resistance
- 9.3
- VGS(th) Gate Threshold Voltage
- 5
- RG Gate Resistance
- 2.3
- VSD Diode Forward Voltage
- 1.3
- IRRM Reverse Recovery Current
- 6.5 ATJ=25°C
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.