01 / 产品信息
产品概述
Infineon IRFB3206PBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRFB3206PBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TO-220
- 包装
- 管装
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
34 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation
- 300 W
- Linear Derating Factor
- 2.0 W/°C
- dv/dt Peak Diode Recovery f
- 5.0 V/ns
- 10lb in (
- 1.1N m)
- EAS (Thermally limited) Single Pulse Avalanche Energy e
- 170 mJ
- RθJC Junction-to-Case k
- 0.50
- RθCS Case-to-Sink, Flat Greased Surface
- 0.50
- RθJA Junction-to-Ambient, TO-220 k
- 62
- RθJA Junction-to-Ambient (PCB Mount) , D2 Pak jk
- 40
- gfs Forward Transconductance
- 210
- Qg Total Gate Charge
- 12
- Qgs Gate-to-Source Charge
- 2
- Qgd Gate-to-Drain ("Miller") Charge
- 3 VGS=10Vg
- Qsync Total Gate Charge Sync. (Qg - Qgd)
- 8
- td(on) Turn-On Delay Time
- 1
- tr Rise Time
- 8
- td(off) Turn-Off Delay Time
- 5
- tf Fall Time
- 8
- Ciss Input Capacitance
- 654
- Coss Output Capacitance
- 72
- Crss Reverse Transfer Capacitance
- 36
- trr Reverse Recovery Time
- 3
- Qrr Reverse Recovery Charge
- 4
性能与环境
- IDM Pulsed Drain Current d
- 840
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds
- 300
- IAR Avalanche Current d See Fig. 14, 1
- 5, 22a, 22b, A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 60
- ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
- 0
- RDS(on) Static Drain-to-Source On-Resistance
- 2
- VGS(th) Gate Threshold Voltage
- 2.0
- RG Internal Gate Resistance
- 0 –––Ω
- IS Continuous Source Current
- 210
- IRRM Reverse Recovery Current
- 2
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。