IRFB3206PBF
Infineon IRFB3206PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TO-220
Product overview
Infineon IRFB3206PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRFB3206PBF
- Category
- HEXFET Power MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
34 parametersConstruction
- PD @TC = 25°C Maximum Power Dissipation
- 300 W
- Linear Derating Factor
- 2.0 W/°C
- dv/dt Peak Diode Recovery f
- 5.0 V/ns
- 10lb in (
- 1.1N m)
- EAS (Thermally limited) Single Pulse Avalanche Energy e
- 170 mJ
- RθJC Junction-to-Case k
- 0.50
- RθCS Case-to-Sink, Flat Greased Surface
- 0.50
- RθJA Junction-to-Ambient, TO-220 k
- 62
- RθJA Junction-to-Ambient (PCB Mount) , D2 Pak jk
- 40
- gfs Forward Transconductance
- 210
- Qg Total Gate Charge
- 12
- Qgs Gate-to-Source Charge
- 2
- Qgd Gate-to-Drain ("Miller") Charge
- 3 VGS=10Vg
- Qsync Total Gate Charge Sync. (Qg - Qgd)
- 8
- td(on) Turn-On Delay Time
- 1
- tr Rise Time
- 8
- td(off) Turn-Off Delay Time
- 5
- tf Fall Time
- 8
- Ciss Input Capacitance
- 654
- Coss Output Capacitance
- 72
- Crss Reverse Transfer Capacitance
- 36
- trr Reverse Recovery Time
- 3
- Qrr Reverse Recovery Charge
- 4
Performance
- IDM Pulsed Drain Current d
- 840
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds
- 300
- IAR Avalanche Current d See Fig. 14, 1
- 5, 22a, 22b, A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 60
- ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
- 0
- RDS(on) Static Drain-to-Source On-Resistance
- 2
- VGS(th) Gate Threshold Voltage
- 2.0
- RG Internal Gate Resistance
- 0 –––Ω
- IS Continuous Source Current
- 210
- IRRM Reverse Recovery Current
- 2
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.