01 / 产品信息
产品概述
Infineon IRFB31N20DPBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRFB31N20DPBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TO-220
- 包装
- 管装
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
35 项结构与连接
- PD @TA = 25°C Power Dissipation
- 3.1 W
- PD @TC = 25°C Power Dissipation
- 200
- Linear Derating Factor
- 1.3 W/°C
- dv/dt Peak Diode Recovery dv/dt
- 2.1 V/ns
- Gate-to-Source Forward Leakage
- 00 VGS=30V
- Gate-to-Source Reverse Leakage
- 100 VGS=-30V
- gfs Forward Transconductance
- 17
- Qg Total Gate Charge
- 70 1 ID=18A
- Qgs Gate-to-Source Charge
- 18
- Qgd Gate-to-Drain ("Miller") Charge
- 33 VGS=10V
- td(on) Turn-On Delay Time
- 16 – VDD=100V
- tr Rise Time
- 38 – nsID=18A
- td(off) Turn-Off Delay Time
- 26 – RG=2.5Ω
- tf Fall Time
- 10
- Ciss Input Capacitance
- 2370 VGS=0V
- Coss Output Capacitance
- 390 – VDS=25V
- Crss Reverse Transfer Capacitance
- 78
- Coss eff. Effective Output Capacitance
- 170
- EAS Single Pulse Avalanche Energy
- 420 mJ
- EAR Repetitive Avalanche Energy
- 20 mJ
- RθJC Junction-to-Case
- 0.75
- RθCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RθJA Junction-to-Ambient
- 62
- RθJA Junction-to-Ambient
- 40
- trr Reverse Recovery Time
- 00 30
- Qrr Reverse RecoveryCharge
- 6
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 31
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 21 A
- IDM Pulsed Drain Current
- 124
- VGS Gate-to-Source Voltage
- ± 30 V
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 200
- ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
- 0.25
- VGS(th) Gate Threshold Voltage
- 3.0
- IAR Avalanche Current
- 18 A
- VSD Diode Forward Voltage
- 3
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。