IRFB31N20DPBF
Infineon IRFB31N20DPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TO-220
Product overview
Infineon IRFB31N20DPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRFB31N20DPBF
- Category
- HEXFET Power MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
35 parametersConstruction
- PD @TA = 25°C Power Dissipation
- 3.1 W
- PD @TC = 25°C Power Dissipation
- 200
- Linear Derating Factor
- 1.3 W/°C
- dv/dt Peak Diode Recovery dv/dt
- 2.1 V/ns
- Gate-to-Source Forward Leakage
- 00 VGS=30V
- Gate-to-Source Reverse Leakage
- 100 VGS=-30V
- gfs Forward Transconductance
- 17
- Qg Total Gate Charge
- 70 1 ID=18A
- Qgs Gate-to-Source Charge
- 18
- Qgd Gate-to-Drain ("Miller") Charge
- 33 VGS=10V
- td(on) Turn-On Delay Time
- 16 – VDD=100V
- tr Rise Time
- 38 – nsID=18A
- td(off) Turn-Off Delay Time
- 26 – RG=2.5Ω
- tf Fall Time
- 10
- Ciss Input Capacitance
- 2370 VGS=0V
- Coss Output Capacitance
- 390 – VDS=25V
- Crss Reverse Transfer Capacitance
- 78
- Coss eff. Effective Output Capacitance
- 170
- EAS Single Pulse Avalanche Energy
- 420 mJ
- EAR Repetitive Avalanche Energy
- 20 mJ
- RθJC Junction-to-Case
- 0.75
- RθCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RθJA Junction-to-Ambient
- 62
- RθJA Junction-to-Ambient
- 40
- trr Reverse Recovery Time
- 00 30
- Qrr Reverse RecoveryCharge
- 6
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 31
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 21 A
- IDM Pulsed Drain Current
- 124
- VGS Gate-to-Source Voltage
- ± 30 V
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 200
- ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
- 0.25
- VGS(th) Gate Threshold Voltage
- 3.0
- IAR Avalanche Current
- 18 A
- VSD Diode Forward Voltage
- 3
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.