01 / 产品信息
产品概述
VISHAY MOSFET IRF720PBF/VISHAY 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- VISHAY
- 型号
- IRF720PBF/VISHAY
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- Linear derating factor
- 0.40 W/°C
- Single pulse avalanche energy b
- 190 mJ
- Repetitive avalanche energy a
- 5.0 mJ
- Maximum power dissipation TC = 25 °C
- 50 W
- Peak diode recovery dV/dt c dV/dt
- 4.0 V/ns
- Maximum junction-to-ambient RthJA
- 62
- Case-to-sink, flat, greased surface RthCS
- 0.50 °C/W
- Maximum junction-to-case (drain) RthJC
- 2.5
- Gate-source leakage IGSS VGS = ± 20
- ± 100 nA
- VDS = 400 V, VGS = 0
- 25
- VDS = 320 V, VGS = 0 V, TJ = 125 °C
- 250
- Forward transconductance gfs VDS = 50 V, ID = 2.0 A b
- 1.7 S
- Input capacitance Ciss VGS = 0 V
- 410
- Output capacitance Coss VDS = 25 V
- 120 pF
- Reverse transfer capacitance Crss f = 1.0 MHz, see fig. 5
- 47
- Total gate charge Qg ID = 3.3 A
- 20
- Gate-source charge Qgs VGS = 10 V VDS = 320 V
- 3.3 nC
- Gate-drain charge Qgd see fig. 6 and 13 b
- 11
- Turn-on delay time td(on)
- 10
- Rise time tr VDD = 200 V, ID = 3.3
- 14
- Fall time tf
- 13
- Internal drain inductance
- 4.5
- Internal source inductance LS die contact
- 7.5
- Body diode reverse recovery time trr
- 270 ns
- Body diode reverse recovery charge Qrr
- 1.4 μC
性能与环境
- Drain-source voltage
- 400 V
- Gate-source voltage
- ± 20 V
- Repetitive avalanche current a
- 3.3 A
- Soldering recommendations (peak temperature) d For 10 s
- 300
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA
- 400 V
- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA
- 4.0 V
- Gate input resistance Rg f = 1 MHz, open drain
- 7.3 Ω
- Body diode voltage VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b
- 1.6 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。