COMPONENT PROFILE
VISHAYMOSFETsIRF720PBF/VISHAY
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
VISHAY MOSFETs IRF720PBF/VISHAY is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- VISHAY
- Part number
- IRF720PBF/VISHAY
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
33 parametersConstruction
- Linear derating factor
- 0.40 W/°C
- Single pulse avalanche energy b
- 190 mJ
- Repetitive avalanche energy a
- 5.0 mJ
- Maximum power dissipation TC = 25 °C
- 50 W
- Peak diode recovery dV/dt c dV/dt
- 4.0 V/ns
- Maximum junction-to-ambient RthJA
- 62
- Case-to-sink, flat, greased surface RthCS
- 0.50 °C/W
- Maximum junction-to-case (drain) RthJC
- 2.5
- Gate-source leakage IGSS VGS = ± 20
- ± 100 nA
- VDS = 400 V, VGS = 0
- 25
- VDS = 320 V, VGS = 0 V, TJ = 125 °C
- 250
- Forward transconductance gfs VDS = 50 V, ID = 2.0 A b
- 1.7 S
- Input capacitance Ciss VGS = 0 V
- 410
- Output capacitance Coss VDS = 25 V
- 120 pF
- Reverse transfer capacitance Crss f = 1.0 MHz, see fig. 5
- 47
- Total gate charge Qg ID = 3.3 A
- 20
- Gate-source charge Qgs VGS = 10 V VDS = 320 V
- 3.3 nC
- Gate-drain charge Qgd see fig. 6 and 13 b
- 11
- Turn-on delay time td(on)
- 10
- Rise time tr VDD = 200 V, ID = 3.3
- 14
- Fall time tf
- 13
- Internal drain inductance
- 4.5
- Internal source inductance LS die contact
- 7.5
- Body diode reverse recovery time trr
- 270 ns
- Body diode reverse recovery charge Qrr
- 1.4 μC
Performance
- Drain-source voltage
- 400 V
- Gate-source voltage
- ± 20 V
- Repetitive avalanche current a
- 3.3 A
- Soldering recommendations (peak temperature) d For 10 s
- 300
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA
- 400 V
- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA
- 4.0 V
- Gate input resistance Rg f = 1 MHz, open drain
- 7.3 Ω
- Body diode voltage VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b
- 1.6 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.