01 / 产品信息
产品概述
Infineon IRF3710LPBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRF3710LPBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TO-220
- 包装
- 管装
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
38 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation
- 200 W
- Linear Derating Factor
- 1.3 W/°C
- EAR Repetitive Avalanche Energy
- 20 mJ
- dv/dt Peak Diode Recovery dv/dt
- 5.8 V/ns
- RJC Junction-to-Case
- 0.75
- RCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RJA Junction-to-Ambient
- 62
- gfs Forward Trans conductance
- 32
- Gate-to-Source Forward Leakage
- 100 VGS=20V
- Gate-to-Source Reverse Leakage
- 100 VGS=-20V
- Qg Total Gate Charge
- 130 ID=28A
- Qgs Gate-to-Source Charge
- 26
- Qgd Gate-to-Drain Charge
- 43
- td(on) Turn-On Delay Time
- 12 VDD=50V
- tr Rise Time
- 58 ID=28A
- td(off) Turn-Off Delay Time
- 45 RG=2.5
- tf Fall Time
- 47
- LD Internal Drain Inductance
- 4.5
- LS Internal Source Inductance
- 7.5
- Ciss Input Capacitance
- 3130 VGS=0V
- Coss Output Capacitance
- 410
- Crss Reverse Transfer Capacitance
- 72
- EAS Single Pulse Avalanche Energy
- 060
- IS
- 57
- ISM
- 230
- trr Reverse Recovery Time
- 140
- Qrr Reverse Recovery Charge
- 670
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 57
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 40 A
- IDM Pulsed Drain Current
- 180
- VGS Gate-to-Source Voltage
- ± 20 V
- IAR Avalanche Current
- 28 A
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 100
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 0.13
- RDS(on) Static Drain-to-Source On-Resistance
- 23
- VGS(th) Gate Threshold Voltage
- 4.0
- VSD Diode Forward Voltage
- 1.2
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。