IRF3710LPBF
Infineon IRF3710LPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220
Product overview
Infineon IRF3710LPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRF3710LPBF
- Category
- HEXFET Power MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
38 parametersConstruction
- PD @TC = 25°C Maximum Power Dissipation
- 200 W
- Linear Derating Factor
- 1.3 W/°C
- EAR Repetitive Avalanche Energy
- 20 mJ
- dv/dt Peak Diode Recovery dv/dt
- 5.8 V/ns
- RJC Junction-to-Case
- 0.75
- RCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RJA Junction-to-Ambient
- 62
- gfs Forward Trans conductance
- 32
- Gate-to-Source Forward Leakage
- 100 VGS=20V
- Gate-to-Source Reverse Leakage
- 100 VGS=-20V
- Qg Total Gate Charge
- 130 ID=28A
- Qgs Gate-to-Source Charge
- 26
- Qgd Gate-to-Drain Charge
- 43
- td(on) Turn-On Delay Time
- 12 VDD=50V
- tr Rise Time
- 58 ID=28A
- td(off) Turn-Off Delay Time
- 45 RG=2.5
- tf Fall Time
- 47
- LD Internal Drain Inductance
- 4.5
- LS Internal Source Inductance
- 7.5
- Ciss Input Capacitance
- 3130 VGS=0V
- Coss Output Capacitance
- 410
- Crss Reverse Transfer Capacitance
- 72
- EAS Single Pulse Avalanche Energy
- 060
- IS
- 57
- ISM
- 230
- trr Reverse Recovery Time
- 140
- Qrr Reverse Recovery Charge
- 670
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 57
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 40 A
- IDM Pulsed Drain Current
- 180
- VGS Gate-to-Source Voltage
- ± 20 V
- IAR Avalanche Current
- 28 A
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 100
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 0.13
- RDS(on) Static Drain-to-Source On-Resistance
- 23
- VGS(th) Gate Threshold Voltage
- 4.0
- VSD Diode Forward Voltage
- 1.2
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.