01 / 产品信息
产品概述
英飞凌 MOSFET IRF100S201 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- 英飞凌
- 型号
- IRF100S201
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
40 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation
- 441 W
- Linear Derating Factor
- 2.9 W/°C
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 567
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 1005 mJ
- EAS (tested) Single Pulse Avalanche Energy Tested Value
- 240
- RJC Junction-to-Case
- 0.34
- RCS Case-to-Sink, Flat Greased Surface
- 0.50
- RJA Junction-to-Ambient
- 62
- RJA Junction-to-Ambient (PCB Mount)
- 40
- Gate-to-Source Forward Leakage
- 100 VGS=20V
- Gate-to-Source Reverse Leakage
- 100 VGS=-20V
- gfs Forward Transconductance
- 278
- Qg Total Gate Charge
- 170 ID=115A
- Qgs Gate-to-Source Charge
- 46 VDS=50V
- Qgd Gate-to-Drain Charge
- 45 VGS=10V
- Qsync Total Gate Charge Sync. (Qg– Qgd)
- 125
- td(on) Turn-On Delay Time
- 17 VDD=65V
- tr Rise Time
- 97 ID=115A
- td(off) Turn-Off Delay Time
- 110 RG=2.7
- tf Fall Time
- 100 VGS=10V
- Ciss Input Capacitance
- 9500 VGS=0V
- Coss Output Capacitance
- 660 VDS=50V
- Crss Reverse Transfer Capacitance
- 310
- Coss eff.(ER)
- 725
- Coss eff.(TR) Output Capacitance (Time Related)
- 950
- IS
- 192 D
- ISM
- 690 S
- dv/dt Peak Diode Recovery dv/dt
- 18
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 192
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 136 A
- IDM Pulsed Drain Current
- 690
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 100
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 0.1
- RDS(on) Static Drain-to-Source On-Resistance
- 3.5
- VGS(th) Gate Threshold Voltage
- 4.0
- RG Gate Resistance
- 2.2
- VSD Diode Forward Voltage
- 1.3
- IRRM Reverse Recovery Current
- 3.5 ATJ=25°C
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。