COMPONENT PROFILE
InfineonMOSFETsIRF100S201
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Infineon MOSFETs IRF100S201 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- Infineon
- Part number
- IRF100S201
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
40 parametersConstruction
- PD @TC = 25°C Maximum Power Dissipation
- 441 W
- Linear Derating Factor
- 2.9 W/°C
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 567
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 1005 mJ
- EAS (tested) Single Pulse Avalanche Energy Tested Value
- 240
- RJC Junction-to-Case
- 0.34
- RCS Case-to-Sink, Flat Greased Surface
- 0.50
- RJA Junction-to-Ambient
- 62
- RJA Junction-to-Ambient (PCB Mount)
- 40
- Gate-to-Source Forward Leakage
- 100 VGS=20V
- Gate-to-Source Reverse Leakage
- 100 VGS=-20V
- gfs Forward Transconductance
- 278
- Qg Total Gate Charge
- 170 ID=115A
- Qgs Gate-to-Source Charge
- 46 VDS=50V
- Qgd Gate-to-Drain Charge
- 45 VGS=10V
- Qsync Total Gate Charge Sync. (Qg– Qgd)
- 125
- td(on) Turn-On Delay Time
- 17 VDD=65V
- tr Rise Time
- 97 ID=115A
- td(off) Turn-Off Delay Time
- 110 RG=2.7
- tf Fall Time
- 100 VGS=10V
- Ciss Input Capacitance
- 9500 VGS=0V
- Coss Output Capacitance
- 660 VDS=50V
- Crss Reverse Transfer Capacitance
- 310
- Coss eff.(ER)
- 725
- Coss eff.(TR) Output Capacitance (Time Related)
- 950
- IS
- 192 D
- ISM
- 690 S
- dv/dt Peak Diode Recovery dv/dt
- 18
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 192
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 136 A
- IDM Pulsed Drain Current
- 690
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 100
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 0.1
- RDS(on) Static Drain-to-Source On-Resistance
- 3.5
- VGS(th) Gate Threshold Voltage
- 4.0
- RG Gate Resistance
- 2.2
- VSD Diode Forward Voltage
- 1.3
- IRRM Reverse Recovery Current
- 3.5 ATJ=25°C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.