01 / 产品信息
产品概述
onsemi FQU2N100TU（MOSFET-功率(N-channel)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- FSC
- 型号
- FQU2N100TU
- 品类
- 功率MOSFET（N沟道）
- 封装
- TO-251
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
37 项结构与连接
- − Continuous (TC = 100 °C)
- 1.0
- Single Pulsed Avalanche Energy (Note 3)
- 160 mJ
- Repetitive Avalanche Energy (Note 2)
- 5.0
- Peak Diode Recovery dv/dt (Note 4) dv/dt
- 5.5
- Power Dissipation (TA = 25 °C) *
- 2.5 W
- Power Dissipation (TC = 25 °C)
- 50
- − Derate above 25 °C
- 0.4 W/°C
- Range
- +150
- TJ Coefficient
- 6
- VDS = 800 V, TC = 125 °C
- 100
- gFS Forward Transconductance VDS = 50 V, ID = 0.8
- 1.9 S
- Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz
- 400 pF
- Coss Output Capacitance
- 40
- Crss Reverse Transfer Capacitance
- 5
- td(on) Turn-On Delay Time VDD = 500 V, ID = 2.0 A
- 13 ns
- tr Turn-On Rise Time
- 30
- td(off) Turn-Off Delay Time
- 25
- tf Turn-Off Fall Time
- 35
- Qg Total Gate Charge VDS = 800 V, ID = 2.0 A
- 12 nC
- Qgs Gate-Source Charge
- 2.5
- Qgd Gate-Drain Charge
- 6.5
- trr Reverse Recovery Time VGS = 0 V, IS = 2.0 A
- 520 ns
- Qrr Reverse Recovery Charge
- 2.3 C
性能与环境
- Drain-Source Voltage
- 1000 VFQUFQD
- Drain Current − Continuous (TC = 25 °C)
- 1.6 A
- Drain Current − Pulsed (Note 2)
- 6.4 A
- Gate-Source Voltage
- ±30 V
- Avalanche Current (Note 2)
- 1.6
- Operating and Storage Temperature TJ
- −55 to °C
- Maximum Lead Temperature for
- 300
- RJC Thermal Resistance, Junction-to-Case, Max
- 2.5 °C/W
- IDSS Zero Gate Voltage Drain Current VDS = 1000 V, VGS = 0
- 10 A
- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0
- 100 nA
- VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A
- 5.0 V
- IS Maximum Continuous Drain-Source Diode Forward Current
- 1.5 A
- ISM Maximum Pulsed Drain-Source Diode Forward Current
- 6.0 A
- VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6
- 1.4 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。