FQU2N100TU
onsemi FQU2N100TU (MOSFET - Power (N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-251
Product overview
onsemi FQU2N100TU (MOSFET - Power (N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- FSC
- Part number
- FQU2N100TU
- Category
- Power MOSFETs (N-Channel)
- Package
- TO-251
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
37 parametersConstruction
- − Continuous (TC = 100 °C)
- 1.0
- Single Pulsed Avalanche Energy (Note 3)
- 160 mJ
- Repetitive Avalanche Energy (Note 2)
- 5.0
- Peak Diode Recovery dv/dt (Note 4) dv/dt
- 5.5
- Power Dissipation (TA = 25 °C) *
- 2.5 W
- Power Dissipation (TC = 25 °C)
- 50
- − Derate above 25 °C
- 0.4 W/°C
- Range
- +150
- TJ Coefficient
- 6
- VDS = 800 V, TC = 125 °C
- 100
- gFS Forward Transconductance VDS = 50 V, ID = 0.8
- 1.9 S
- Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz
- 400 pF
- Coss Output Capacitance
- 40
- Crss Reverse Transfer Capacitance
- 5
- td(on) Turn-On Delay Time VDD = 500 V, ID = 2.0 A
- 13 ns
- tr Turn-On Rise Time
- 30
- td(off) Turn-Off Delay Time
- 25
- tf Turn-Off Fall Time
- 35
- Qg Total Gate Charge VDS = 800 V, ID = 2.0 A
- 12 nC
- Qgs Gate-Source Charge
- 2.5
- Qgd Gate-Drain Charge
- 6.5
- trr Reverse Recovery Time VGS = 0 V, IS = 2.0 A
- 520 ns
- Qrr Reverse Recovery Charge
- 2.3 C
Performance
- Drain-Source Voltage
- 1000 VFQUFQD
- Drain Current − Continuous (TC = 25 °C)
- 1.6 A
- Drain Current − Pulsed (Note 2)
- 6.4 A
- Gate-Source Voltage
- ±30 V
- Avalanche Current (Note 2)
- 1.6
- Operating and Storage Temperature TJ
- −55 to °C
- Maximum Lead Temperature for
- 300
- RJC Thermal Resistance, Junction-to-Case, Max
- 2.5 °C/W
- IDSS Zero Gate Voltage Drain Current VDS = 1000 V, VGS = 0
- 10 A
- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0
- 100 nA
- VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A
- 5.0 V
- IS Maximum Continuous Drain-Source Diode Forward Current
- 1.5 A
- ISM Maximum Pulsed Drain-Source Diode Forward Current
- 6.0 A
- VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6
- 1.4 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.