01 / 产品信息
产品概述
onsemi FQP6N80C（MOSFET-功率(N-channel)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- FSC
- 型号
- FQP6N80C
- 品类
- 功率MOSFET（N沟道）
- 封装
- TO-220
- 包装
- 管装
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
23 项结构与连接
- ID = 250 µA, Referenced to 25°C
- 0.97 V/°C
- IDSS VDS = 800 V, VGS = 0
- 10 µA
- VDS = 640 V, TC = 125°C
- 100 µA
- VGS = 10 V, ID = 2.75
- 2.1 Ω
- gFS Forward Transconductance VDS = 50 V, ID = 2.75
- 5.4 S
- Ciss Input Capacitance VDS = 25 V, VGS = 0 V
- 1010 pF
- Coss Output Capacitance f = 1.0 MHz
- 90 pF
- Crss Reverse Transfer Capacitance
- 8 pF
- td(on) Turn-On Delay Time
- 26 ns
- tr Turn-On Rise Time
- 65 ns
- td(off) Turn-Off Delay Time
- 47 ns
- tf Turn-Off Fall Time
- 44 ns
- Qg Total Gate Charge VDS = 640 V, ID = 5.5 A
- 21 nC
- Qgs Gate-Source Charge VGS = 10
- 6 nC
- Qgd Gate-Drain Charge (Note 4)
- 9 nC
- trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A
- 615 ns
- Qrr Reverse Recovery Charge dIF / dt = 100 A/µs
- 5.4 µC
性能与环境
- BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
- 800 V
- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0
- 100 nA
- VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
- 5.0 V
- IS Maximum Continuous Drain-Source Diode Forward Current
- 5.5 A
- ISM Maximum Pulsed Drain-Source Diode Forward Current
- 22 A
- VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5
- 1.4 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。