FQP6N80C
onsemi FQP6N80C (MOSFET - Power (N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220
Product overview
onsemi FQP6N80C (MOSFET - Power (N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- FSC
- Part number
- FQP6N80C
- Category
- Power MOSFETs (N-Channel)
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
23 parametersConstruction
- ID = 250 µA, Referenced to 25°C
- 0.97 V/°C
- IDSS VDS = 800 V, VGS = 0
- 10 µA
- VDS = 640 V, TC = 125°C
- 100 µA
- VGS = 10 V, ID = 2.75
- 2.1 Ω
- gFS Forward Transconductance VDS = 50 V, ID = 2.75
- 5.4 S
- Ciss Input Capacitance VDS = 25 V, VGS = 0 V
- 1010 pF
- Coss Output Capacitance f = 1.0 MHz
- 90 pF
- Crss Reverse Transfer Capacitance
- 8 pF
- td(on) Turn-On Delay Time
- 26 ns
- tr Turn-On Rise Time
- 65 ns
- td(off) Turn-Off Delay Time
- 47 ns
- tf Turn-Off Fall Time
- 44 ns
- Qg Total Gate Charge VDS = 640 V, ID = 5.5 A
- 21 nC
- Qgs Gate-Source Charge VGS = 10
- 6 nC
- Qgd Gate-Drain Charge (Note 4)
- 9 nC
- trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A
- 615 ns
- Qrr Reverse Recovery Charge dIF / dt = 100 A/µs
- 5.4 µC
Performance
- BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
- 800 V
- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0
- 100 nA
- VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
- 5.0 V
- IS Maximum Continuous Drain-Source Diode Forward Current
- 5.5 A
- ISM Maximum Pulsed Drain-Source Diode Forward Current
- 22 A
- VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5
- 1.4 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.