01 / 产品信息
产品概述
Infineon FP50R12W2T7_B11（IGBT模块）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- FP50R12W2T7_B11
- 品类
- IGBT模块
- 封装
- Module
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
35 项结构与连接
- Comparative tracking
- > 200
- Relative thermal index RTI housing
- 140 °C
- Stray inductance module LsCE
- 30 nH
- Mounting force per clamp F 40
- 80 N
- Weight
- 39 g
- Gate-emitter peak vol
- ±20
- Datasheet
- 3
- Continuous DC collector ICDC Tvj max = 175 °C TH = 95 °C
- 50 A
- Repetitive peak collector ICRM tp limited by Tvj op
- 100 A
- Collector-emitter VCE sat IC = 50 A, VGE = 15 V Tvj = 25 °C
- 1.50 V
- Tvj = 125 °C
- 1.64
- Tvj = 175 °C
- 1.72
- Gate charge QG VGE = ±15 V, VCC = 600 V, Tvj = 25 °C
- 0.92 µC
- Internal gate resistor RGint Tvj = 25 °C
- 0 Ω
- Gate-emitter leakage IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C
- 100 nA
- Turn-on delay time tdon IC = 50 A, VCC = 600 V, Tvj = 25 °C
- 0.051 µs
- 1700 A/µs (Tvj = 175 °C) Tvj = 175 °C
- 5.21
- 2900 V/µs (Tvj = 175 °C) Tvj = 175 °C
- 6.63
- SC data ISC VGE ≤ 15 V, VCC = 800 V, tP ≤ 8 µs
- 190 A
- tP ≤ 7 µs
- 180
- I2t - value
- 2t
- Repetitive peak reverse VRRM Tvj = 25 °C
- 1200 V
- Continuous DC forward
- 50 A
- Repetitive peak forward IFRM tP = 1 ms
- 100 A
- I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C
- 300 A²s
- Recovered charge Qr VCC = 600 V, IF = 50 A, Tvj = 25 °C
- 4.36 µC
性能与环境
- Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min
- 2.5 kV
- Module lead resistance, RAA'+CC' TH = 25 °C, per switch
- 6 mΩ
- Module lead resistance, RCC'+EE' TH = 25 °C, per switch
- 5 mΩ
- Storage temperature Tstg -40
- 125 °C
- Collector-emitter voltage VCES Tvj = 25 °C
- 1200 V
- Gate-emitter peak voltage
- ±20 V
- Thermal resistance, RthJH per IGBT, λgrease = 4.3 W/(m·K)
- 0.731 K/W
- Temperature under Tvj op -40
- 175 °C
- Forward voltage VF IF = 50 A, VGE = 0 V Tvj = 25 °C
- 1.72 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。