FP50R12W2T7_B11
Infineon FP50R12W2T7_B11 (IGBT module) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- Module
Product overview
Infineon FP50R12W2T7_B11 (IGBT module) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- FP50R12W2T7_B11
- Category
- IGBT Modules
- Package
- Module
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
35 parametersConstruction
- Comparative tracking
- > 200
- Relative thermal index RTI housing
- 140 °C
- Stray inductance module LsCE
- 30 nH
- Mounting force per clamp F 40
- 80 N
- Weight
- 39 g
- Gate-emitter peak vol
- ±20
- Datasheet
- 3
- Continuous DC collector ICDC Tvj max = 175 °C TH = 95 °C
- 50 A
- Repetitive peak collector ICRM tp limited by Tvj op
- 100 A
- Collector-emitter VCE sat IC = 50 A, VGE = 15 V Tvj = 25 °C
- 1.50 V
- Tvj = 125 °C
- 1.64
- Tvj = 175 °C
- 1.72
- Gate charge QG VGE = ±15 V, VCC = 600 V, Tvj = 25 °C
- 0.92 µC
- Internal gate resistor RGint Tvj = 25 °C
- 0 Ω
- Gate-emitter leakage IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C
- 100 nA
- Turn-on delay time tdon IC = 50 A, VCC = 600 V, Tvj = 25 °C
- 0.051 µs
- 1700 A/µs (Tvj = 175 °C) Tvj = 175 °C
- 5.21
- 2900 V/µs (Tvj = 175 °C) Tvj = 175 °C
- 6.63
- SC data ISC VGE ≤ 15 V, VCC = 800 V, tP ≤ 8 µs
- 190 A
- tP ≤ 7 µs
- 180
- I2t - value
- 2t
- Repetitive peak reverse VRRM Tvj = 25 °C
- 1200 V
- Continuous DC forward
- 50 A
- Repetitive peak forward IFRM tP = 1 ms
- 100 A
- I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C
- 300 A²s
- Recovered charge Qr VCC = 600 V, IF = 50 A, Tvj = 25 °C
- 4.36 µC
Performance
- Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min
- 2.5 kV
- Module lead resistance, RAA'+CC' TH = 25 °C, per switch
- 6 mΩ
- Module lead resistance, RCC'+EE' TH = 25 °C, per switch
- 5 mΩ
- Storage temperature Tstg -40
- 125 °C
- Collector-emitter voltage VCES Tvj = 25 °C
- 1200 V
- Gate-emitter peak voltage
- ±20 V
- Thermal resistance, RthJH per IGBT, λgrease = 4.3 W/(m·K)
- 0.731 K/W
- Temperature under Tvj op -40
- 175 °C
- Forward voltage VF IF = 50 A, VGE = 0 V Tvj = 25 °C
- 1.72 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.