01 / 产品信息
产品概述
CSD18501Q5A 是一款 40 V N 沟道 NexFET 功率 MOSFET，采用 5 mm x 6 mm SON 封装，在 10 V 栅极驱动下最大 Rds(on) 为 3.2 mOhm（4.5 V 时为 4.3 mOhm）。它具有逻辑电平驱动、典型栅极阈值 1.8 V，并支持最高 161 A（硅限制）/ 100 A（封装限制）漏极电流。工作范围 -55°C 至 150°C，适用于同步降压与功率开关应用。
- 厂商
- TI
- 型号
- CSD18501Q5A
- 品类
- 电源管理芯片
- 封装
- VSONP-8
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
36 项结构与连接
- VG
- 2.5 mΩ
- ID
- 161
- Power Dissipation
- 3.1
- Power Dissipation, TC = 25°C
- 150
- EAS
- 231 mJ
- VGS = 4.5 V, ID = 25
- 3.3 mΩ
- VGS = 10 V, ID = 25
- 2.5 mΩ
- gƒs Transconductance VDS = 20 V, ID = 25
- 118 S
- Ciss Input Capacitance
- 200 pF
- Coss Output Capacitance
- 725 pF
- Crss Reverse Transfer Capacitance
- 18 pF
- Qg Gate Charge Total (4.5 V)
- 20 nC
- Qg Gate Charge Total (10 V)
- 42
- Qgd Gate Charge Gate-to-Drain VDS = 20 V, ID = 25
- 5.9 nC
- Qgs Gate Charge Gate-to-Source
- 8.1 nC
- Qg(th) Gate Charge at Vth
- 5.7 nC
- Qoss Output Charge VDS = 20 V, VGS = 0
- 48 nC
- td(on) Turn On Delay Time
- 4.7 ns
- tr Rise Time VDS = 20 V, VGS = 10 V
- 10 ns
- td(off) Turn Off Delay Time IDS = 25 A, RG = 0
- 20 ns
- tƒ Fall Time
- 3.4 ns
- Qrr Reverse Recovery Charge
- 70 nC
- trr Reverse Recovery Time
- 40 ns
性能与环境
- VGS(th) Threshold Voltage
- 1 V
- VDS Drain-to-Source Voltage
- 40 V
- power conversion applications. VGS Gate-to-Source Voltage
- ±20 V
- Continuous Drain Current (Package limited)
- 100
- S 1 8 D Continuous Drain Current
- 22 A
- IDM Pulsed Drain Current
- 400 A
- BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA
- 40 V
- IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 32
- 1 μA
- IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20
- 100 nA
- RG Series Gate Resistance
- 1.2 Ω
- VSD Diode Forward Voltage IDS = 25 A, VGS = 0
- 0.8 V
- RθJC Junction-to-Case Thermal Resistance
- 1.0
- RθJA Junction-to-Ambient Thermal Resistance (1)
- 50
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。