CSD18501Q5A
The CSD18501Q5A is a 40 V N-channel NexFET power MOSFET in a 5 mm x 6 mm SON package with a maximum Rds(on) of 3.2 mOhm at 10 V gate drive (4.3 mOhm at 4.5 V). It features logic-level drive, a typical gate threshold of 1.8 V and supports up to 161 A silicon-limited / 100 A package-limited drain current. With a -55 degC to 150 degC range it is suited to synchronous buck and power-switching applications.
- Package
- VSONP-8
Product overview
The CSD18501Q5A is a 40 V N-channel NexFET power MOSFET in a 5 mm x 6 mm SON package with a maximum Rds(on) of 3.2 mOhm at 10 V gate drive (4.3 mOhm at 4.5 V). It features logic-level drive, a typical gate threshold of 1.8 V and supports up to 161 A silicon-limited / 100 A package-limited drain current. With a -55 degC to 150 degC range it is suited to synchronous buck and power-switching applications.
- Manufacturer
- TI
- Part number
- CSD18501Q5A
- Category
- Power Management
- Package
- VSONP-8
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
36 parametersConstruction
- VG
- 2.5 mΩ
- ID
- 161
- Power Dissipation
- 3.1
- Power Dissipation, TC = 25°C
- 150
- EAS
- 231 mJ
- VGS = 4.5 V, ID = 25
- 3.3 mΩ
- VGS = 10 V, ID = 25
- 2.5 mΩ
- gƒs Transconductance VDS = 20 V, ID = 25
- 118 S
- Ciss Input Capacitance
- 200 pF
- Coss Output Capacitance
- 725 pF
- Crss Reverse Transfer Capacitance
- 18 pF
- Qg Gate Charge Total (4.5 V)
- 20 nC
- Qg Gate Charge Total (10 V)
- 42
- Qgd Gate Charge Gate-to-Drain VDS = 20 V, ID = 25
- 5.9 nC
- Qgs Gate Charge Gate-to-Source
- 8.1 nC
- Qg(th) Gate Charge at Vth
- 5.7 nC
- Qoss Output Charge VDS = 20 V, VGS = 0
- 48 nC
- td(on) Turn On Delay Time
- 4.7 ns
- tr Rise Time VDS = 20 V, VGS = 10 V
- 10 ns
- td(off) Turn Off Delay Time IDS = 25 A, RG = 0
- 20 ns
- tƒ Fall Time
- 3.4 ns
- Qrr Reverse Recovery Charge
- 70 nC
- trr Reverse Recovery Time
- 40 ns
Performance
- VGS(th) Threshold Voltage
- 1 V
- VDS Drain-to-Source Voltage
- 40 V
- power conversion applications. VGS Gate-to-Source Voltage
- ±20 V
- Continuous Drain Current (Package limited)
- 100
- S 1 8 D Continuous Drain Current
- 22 A
- IDM Pulsed Drain Current
- 400 A
- BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA
- 40 V
- IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 32
- 1 μA
- IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20
- 100 nA
- RG Series Gate Resistance
- 1.2 Ω
- VSD Diode Forward Voltage IDS = 25 A, VGS = 0
- 0.8 V
- RθJC Junction-to-Case Thermal Resistance
- 1.0
- RθJA Junction-to-Ambient Thermal Resistance (1)
- 50
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.