01 / 产品信息
产品概述
WeEn 晶闸管(SCR) BT137S-800E,118 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- WeEn
- 型号
- BT137S-800E,118
- 品类
- 晶闸管(SCR)
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
34 项结构与连接
- VDRM repetitive peak off
- 800 V
- full sine wave; Tj(init) = 25 °C;
- 71 A
- VD = 12 V; IT = 0.1 A; T2+ G-;
- 4 mA
- VD = 12 V; IT = 0.1 A; T2- G-;
- 5 mA
- VD = 12 V; IT = 0.1 A; T2- G+;
- 11 mA
- 3 G gate
- 037
- BT137S-800E TO252 BT137S-800E,118 Reel 2500
- 07-Ma
- BT137S-800E 137S8E
- 137S8E
- VDRM repetitive peak off-state
- 800 V
- full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
- 71 A
- I t I t for fusing tp = 10 ms;
- 21 A²s
- dIT/dt rate of rise of on-state IG = 50 mA
- 50 A/µs
- PGM peak gate power
- 5 W
- PG(AV) average gate power over any 20 ms period
- 0.5 W
- 003aae689
- 003
- Product data sheet
- 19 March 2025
- Product data sheet 19 March 2025
- 3 / 13
- Product data sheet 19 March 202
- 5 / 13
- full cycle; Fig. 6
- 2 K/W
- VD = 12 V; IG = 0.1 A; T2+ G-;
- 14 mA
- VD = 12 V; IG = 0.1 A; T2- G-;
- 3 mA
- VD = 12 V; IG = 0.1 A; T2- G+;
- 4 mA
- VD = 400 V; IT = 0.1 A; Tj = 125 °C;
- 0.4 V
性能与环境
- Tj junction temperature
- 125 °C
- IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
- 2.5 mA
- IH holding current VD = 12 V; Tj = 25 °C; Fig. 9
- 2.5 mA
- VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10
- 1.3 V
- IGM peak gate current
- 2 A
- Tstg storage temperature
- 150 °C
- Rth(j-mb) thermal resistance half cycle; Fig. 6
- 2.4 K/W
- Rth(j-a) thermal resistance PCB (FR4) mounted; minimum pad
- 75 K/W
- IL latching current VD = 12 V; IG = 0.1 A; T2+ G+;
- 3 mA
- VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C;
- 0.7 V
- ID off-state current VD = 800 V; Tj = 125 °C
- 0.1 mA
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。