COMPONENT PROFILE
WeEnThyristors (SCR)BT137S-800E,118
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
WeEn Thyristors (SCR) BT137S-800E,118 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- WeEn
- Part number
- BT137S-800E,118
- Category
- Thyristors (SCR)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
34 parametersConstruction
- VDRM repetitive peak off
- 800 V
- full sine wave; Tj(init) = 25 °C;
- 71 A
- VD = 12 V; IT = 0.1 A; T2+ G-;
- 4 mA
- VD = 12 V; IT = 0.1 A; T2- G-;
- 5 mA
- VD = 12 V; IT = 0.1 A; T2- G+;
- 11 mA
- 3 G gate
- 037
- BT137S-800E TO252 BT137S-800E,118 Reel 2500
- 07-Ma
- BT137S-800E 137S8E
- 137S8E
- VDRM repetitive peak off-state
- 800 V
- full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
- 71 A
- I t I t for fusing tp = 10 ms;
- 21 A²s
- dIT/dt rate of rise of on-state IG = 50 mA
- 50 A/µs
- PGM peak gate power
- 5 W
- PG(AV) average gate power over any 20 ms period
- 0.5 W
- 003aae689
- 003
- Product data sheet
- 19 March 2025
- Product data sheet 19 March 2025
- 3 / 13
- Product data sheet 19 March 202
- 5 / 13
- full cycle; Fig. 6
- 2 K/W
- VD = 12 V; IG = 0.1 A; T2+ G-;
- 14 mA
- VD = 12 V; IG = 0.1 A; T2- G-;
- 3 mA
- VD = 12 V; IG = 0.1 A; T2- G+;
- 4 mA
- VD = 400 V; IT = 0.1 A; Tj = 125 °C;
- 0.4 V
Performance
- Tj junction temperature
- 125 °C
- IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
- 2.5 mA
- IH holding current VD = 12 V; Tj = 25 °C; Fig. 9
- 2.5 mA
- VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10
- 1.3 V
- IGM peak gate current
- 2 A
- Tstg storage temperature
- 150 °C
- Rth(j-mb) thermal resistance half cycle; Fig. 6
- 2.4 K/W
- Rth(j-a) thermal resistance PCB (FR4) mounted; minimum pad
- 75 K/W
- IL latching current VD = 12 V; IG = 0.1 A; T2+ G+;
- 3 mA
- VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C;
- 0.7 V
- ID off-state current VD = 800 V; Tj = 125 °C
- 0.1 mA
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.